AOB600A70FL

$2.01

Description：MOSFET N-CH 700V 8.5A TO263
Series：aMOS5™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:353706f19005 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 700V 8.5A TO263
Series：aMOS5™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：700 V
Current - Continuous Drain (Id) @ 25°C：8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：600mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：900 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：104W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Download product information

AOB600A70FL

Overview

The AOB600A70FL is a 700V, aMOS5™ N-Channel Power Transistor in a TO-263 (D2PAK) tape and reel package. It features a drain-source breakdown voltage of 800V, continuous drain current of 8.5A at 25°C case temperature, and pulsed drain current of 34A. The maximum on-resistance is 0.6Ω at VGS=10V. Key dynamic parameters include a total gate charge of 14.5nC, input capacitance of 900pF, and body diode reverse recovery time of 260ns. Thermal resistance junction-to-case is 1.2°C/W with power dissipation rated at 20W.

Feature Summary

Proprietary aMOS5™ technology for low on-resistance
Optimized switching parameters for improved EMI performance
Enhanced body diode for robustness and fast reverse recovery
High dv/dt ruggedness capability

Applications

Flyback converters for Switch Mode Power Supplies (SMPS)
Charger and PD Adapter designs
TV power supply circuits
Lighting applications

Procurement Notes

Verify the specific ordering suffix 'FL' corresponds to the TO-263 Tape & Reel packaging configuration as documented in the manufacturer's datasheet. Confirm that the component meets RoHS compliance standards required for your assembly process. Ensure design compatibility with the specified thermal characteristics and electrical ratings before finalizing procurement orders.

Selection Notes

Select this component for high-voltage flyback applications requiring optimized EMI performance. The enhanced body diode supports robust reverse recovery characteristics suitable for hard-switching topologies. Verify that the 0.6Ω maximum on-resistance aligns with conduction loss requirements and that the TO-263 package fits the available PCB real estate and thermal management strategy.

Part Context

This device belongs to the aMOS5™ family of N-Channel Power Transistors from Alpha & Omega Semiconductor. It utilizes proprietary trench MOSFET technology designed to minimize both conduction and switching losses. The series targets efficiency improvements in power conversion systems where electromagnetic interference reduction is critical.