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Product Detailed Parameters
- Description：MOSFET N-CH 60V 44.5A/120A TO263
- Series：AlphaSGT™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：44.5A (Ta), 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：8V, 10V
- Rds On (Max) @ Id, Vgs：2.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：110 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5300 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：8.3W (Ta), 260W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The AOB66613L is a 60V N-Channel AlphaSGT™ Trench Power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low on-resistance and excellent gate charge characteristics. The device is housed in a TO-263 (D2PAK) tape and reel package, suitable for automated assembly. Key electrical parameters include a drain-source voltage of 60V, a continuous drain current of 120A at case temperature, and a maximum on-resistance of less than 2.5mΩ at VGS=10V. It supports high-frequency switching applications with verified avalanche energy ratings.
Feature Summary
- Utilizes AlphaSGT™ Trench Power technology for optimized performance
- Features low RDS(ON) and excellent Gate Charge x RDS(ON) Figure of Merit
- Includes 100% Unclamped Inductive Switching (UIS) testing
- RoHS and Halogen-Free compliant construction
Applications
- High Frequency Switching
- Synchronous Rectification
- BLDC Motor Control
Procurement Notes
Verify the specific ordering suffix matches the required package type, as the 'B' suffix denotes the TO-263 Tape & Reel format. Confirm that the component meets RoHS and Halogen-Free compliance requirements for your manufacturing process. Ensure the minimum order quantity aligns with the standard packaging specifications provided by the manufacturer. Review the datasheet for absolute maximum ratings to prevent operational exceedance.
Selection Notes
Select this component when a 60V N-Channel MOSFET with high current capability is required for synchronous rectification or BLDC applications. The TO-263 package facilitates surface-mount assembly while providing adequate thermal dissipation. Consider the low on-resistance and fast switching speeds for efficiency optimization in power conversion circuits. Verify thermal management requirements against the junction-to-case resistance values.
Part Context
This part belongs to the AlphaSGT™ series from Alpha & Omega Semiconductor Inc., designed for power management applications. It shares core technological features with the through-hole variant AOT66613L but differs in packaging. The TO-263 form factor targets surface-mount production lines requiring robust power handling capabilities within a compact footprint.
Replacement Considerations
The AOT66613L is functionally equivalent to the AOT66613L regarding electrical specifications, differing primarily in package style. No other direct substitute part numbers are confirmed in the official documentation.
