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Product Detailed Parameters
- Description：FET N CHANNEL 80V
- Series：AlphaSGT2™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：44A (Ta), 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：8V, 10V
- Rds On (Max) @ Id, Vgs：2.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：110 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5750 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：10W (Ta), 310W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The AOB66811L is an N-Channel AlphaSGT2™ trench MOSFET with a drain-source voltage of 80V. It supports a continuous drain current of 44A at 25°C ambient and 140A at case temperature. The device features a maximum on-resistance of 2.7mΩ at VGS=10V and 3mΩ at VGS=8V, both measured at 20A. Gate charge is 110nC max at 10V. Power dissipation reaches 310W at TC=100°C. Operating junction temperature ranges from -55°C to 175°C.
Feature Summary
- Utilizes AlphaSGT2™ trench technology for low on-resistance and optimized switching performance.
- Subjected to 100% unclamped inductive switching (UIS) testing.
- Includes 100% gate resistance testing for quality assurance.
Applications
- Industrial applications
- Telecom power supplies
- Server power supplies
Procurement Notes
Verify the specific package type and tape & reel configuration against the manufacturer's ordering information before procurement. Confirm that the component meets RoHS 2.0 and halogen-free compliance requirements for your assembly process. Ensure the design accommodates the specified thermal characteristics and maximum junction temperature limits during operation.
Selection Notes
Select this component for designs requiring high current handling in an 80V environment. The TO-263 D2PAK package facilitates surface mount installation. Consider the thermal resistance values when designing heatsinking solutions to maintain junction temperatures within the 175°C limit under varying load conditions.
Part Context
This part belongs to the AlphaSGT2™ series of power MOSFETs manufactured by Alpha & Omega Semiconductor Inc. It is designed as a surface-mount alternative to through-hole variants, offering similar electrical performance in a compact footprint suitable for modern PCB layouts.
Replacement Considerations
The AOT66811L is a through-hole equivalent with comparable electrical specifications but differs in package type. Verify pinout compatibility and thermal management requirements when substituting between surface mount and through-hole packages.
