SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AOC2403 is a 20V P-Channel MOSFET utilizing advanced trench technology. It features a drain-source voltage (BVDSS) of -20V and a continuous source current (ID) of -1.8A at VGS=-4.5V. The on-resistance (RDS(ON)) is less than 95mΩ at VGS=-4.5V, rising to less than 200mΩ at VGS=-1.5V. Key dynamic parameters include a total gate charge (Qg) of 4.8nC and a forward transconductance (gFS) of 7S. The device operates within a junction temperature range of -55°C to 150°C.
Verify the specific package type AlphaDFN 0.97x0.97_4 against your PCB footprint requirements. Confirm that the component's qualification for the consumer market aligns with your project's intended use case. Ensure that any application does not involve life support devices or systems, as such uses are explicitly unauthorized by the manufacturer.
Select this component for low-voltage switching applications requiring efficient performance at reduced gate drive voltages. The low gate charge supports high-frequency operation, while the specified on-resistance values indicate suitability for moderate current loads up to 1.8A. Evaluate thermal management needs based on the provided transient thermal impedance data.
This part belongs to the P-Channel MOSFET category from Alpha & Omega Semiconductor Inc. It is designed using trench technology to optimize conduction losses and switching speeds. The device is marketed primarily for consumer electronics applications, offering a compact solution for power management tasks in portable and space-constrained devices.
Public confirmed substitute part numbers: TSM2313, TSM9434, TSM2301, TSM3441, AO3413, AO7413, AOC2415, AON1611, AON7407, AO7417.
The maximum gate-source voltage (VGS(MAX)) rating is ±8V.
The RDS(ON) increases as the gate voltage decreases; it is less than 95mΩ at -4.5V and less than 200mΩ at -1.5V.