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Product Detailed Parameters
- Description：MOSFET P-CH 20V 2A 4ALPHADFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：80mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：470 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：600mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：4-AlphaDFN (0.97x0.97)
- Package / Case：4-SMD, No Lead
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Overview
The AOC2423 is a 20V P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low gate charge and excellent on-resistance, supporting operation with gate voltages as low as 2.5V while maintaining a maximum VGS rating of 12V. The device provides a drain-source breakdown voltage of -20V and a continuous source current of -2A at VGS=-10V. On-resistance values are specified as less than 80mΩ at VGS=-10V, less than 95mΩ at VGS=-4.5V, and less than 120mΩ at VGS=-2.5V.
Feature Summary
- Advanced trench technology for optimized on-resistance and low gate charge
- Capable of operation with gate voltages as low as 2.5V
- Includes typical ESD protection rated at HBM Class 2
Applications
- Load switching applications
- Low-side switch configurations
- Power management circuits requiring low gate drive voltage
Procurement Notes
Verify the specific package variant during procurement, as datasheet documentation indicates availability in both AlphaDFN 0.97x0.97A_4 and SOT-23-3 form factors. Confirm that the component meets consumer market qualification standards, as critical life support applications are explicitly excluded from authorization by the manufacturer.
Selection Notes
Select this component for designs requiring a compact P-Channel MOSFET with low gate drive requirements. Ensure the application operates within the 12V maximum gate-source voltage limit. Consider the thermal characteristics and junction temperature range of -55°C to 150°C when determining heat dissipation needs for the target circuit environment.
Part Context
This part belongs to the Alpha & Omega Semiconductor portfolio of power management discrete semiconductors. It is designed primarily for the consumer electronics market, offering a balance of performance and size through its trench technology implementation. The device serves as a standard solution for general-purpose switching tasks where space constraints and efficient gate control are prioritized.
Replacement Considerations
Direct electrical substitutes include other 20V P-Channel MOSFETs such as AO3413, AO7413, AOC2415, AON1611, AON7407, and AO7417 from Alpha & Omega Semiconductor. Cross-manufacturer equivalents include TSM2313, TSM9434, TSM2301, and TSM3441 from Taiwan Semiconductor.
FAQ
What is the maximum allowable gate-source voltage for the AOC2423?
The absolute maximum rating for the gate-source voltage (VGS) is ±12V.
Does the AOC2423 feature built-in body diode protection?
Yes, the datasheet specifies a single configuration with a built-in diode, characterized by a forward voltage of approximately -0.74V at -1A source current.
