AOC3860

Description：MOSFET 2N-CH 6DFN
Series：-

SKU:ea58cceb4e34 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 6DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：2.5W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-XDFN
Supplier Device Package：6-DFN (3.05x1.77)
Grade：-
Qualification：-

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AOC3860

Overview

The AOC3860 is a dual N-channel MOSFET in an AlphaDFN 3.05x1.77_6 package, rated for a drain-source voltage of 12V and continuous source current of 30A at 25°C. It features low on-resistance, with maximum values of 2.7mΩ at VGS=4.5V, 2.8mΩ at VGS=4.0V, 2.85mΩ at VGS=3.8V, 3.3mΩ at VGS=3.1V, and 4.2mΩ at VGS=2.5V, all tested at IS=5A. The device has a gate threshold voltage ranging from 0.3V to 0.9V at TJ=25°C and operates within a junction temperature range of -55°C to 150°C.

Feature Summary

Dual common-drain configuration designed for battery protection switches and mobile device charging applications.
Trench Power MOSFET technology providing low on-resistance across various gate drive voltages.
Integrated ESD protection compliant with HBM Class 2 standards to enhance battery safety.

Applications

Battery protection switch
Mobile device battery charging
Mobile device battery discharging

Procurement Notes

Verify the specific ordering suffix and tape & reel quantity (8000 units) against the manufacturer's official documentation before procurement. Confirm that the AlphaDFN package dimensions match the design requirements. Ensure compliance with RoHS and halogen-free standards as stated in the datasheet specifications.

Selection Notes

Select this component when a compact dual N-channel solution is required for 12V systems. The low on-resistance supports efficient power handling up to 30A. Verify that the gate drive voltage aligns with the specified thresholds for optimal RDS(on) performance. Consider the thermal characteristics and package size for PCB layout constraints.

Part Context

This part belongs to Alpha & Omega Semiconductor's lineup of trench power MOSFETs. It is specifically engineered for low-voltage, high-current applications where space efficiency and switching performance are critical. The dual configuration allows for simplified circuit designs in battery management systems.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Consult the manufacturer for potential alternatives if this specific package or electrical rating is unavailable.