AOC3868

$0.24

Description：MOSFET 2N-CH 6DFN
Series：-

SKU:186ca4932520 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 6DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：50nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：2.5W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-XDFN
Supplier Device Package：6-DFN (2.7x1.8)
Grade：-
Qualification：-

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AOC3868

Overview

The AOC3868 is a dual N-channel enhancement mode MOSFET manufactured by Alpha & Omega Semiconductor. It utilizes Trench Power MOSFET technology and features a common-drain configuration within an AlphaDFN 2.7x1.8mm package. The device supports a source-source breakdown voltage of 12V and a continuous source current of 1A. Key electrical parameters include a maximum on-resistance of 5mΩ at VGS=4.5V, a gate threshold voltage ranging from 0.4V to 1.1V, and a total gate charge of 35nC. Thermal characteristics specify a junction-to-ambient thermal resistance of 80°C/W and an operating temperature range of -55°C to 150°C.

Feature Summary

Trench Power MOSFET technology for low on-resistance
Integrated ESD protection for improved battery safety
Common-drain configuration simplifies circuit design

Applications

Battery protection switch
Mobile device battery charging and discharging
Typical ESD protection

Procurement Notes

Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation before procurement. Confirm that the component meets RoHS and Halogen-Free compliance requirements as stated in the datasheet. Ensure the package type matches the AlphaDFN 2.7x1.8 specification required for the target application layout.

Selection Notes

Select this component when a dual N-channel MOSFET with a common-drain topology is required for low-voltage applications. The 12V rating and 1A current capacity suit mobile device power management. Evaluate the 5mΩ on-resistance against system efficiency targets and verify compatibility with available gate drive voltages.

Part Context

This part belongs to the Alpha & Omega Semiconductor lineup of trench MOSFETs designed for portable electronics. It integrates two independent N-channel devices into a single compact footprint. The common-drain arrangement distinguishes it from standard common-source configurations, offering specific advantages for load switching and protection circuits.