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Product Detailed Parameters
- Description：MOSFET 2N-CH 12V 25A 10DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：25A (Ta)
- Rds On (Max) @ Id, Vgs：2.8mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：32nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：2.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：10-SMD, No Lead
- Supplier Device Package：10-AlphaDFN (3.01x1.52)
- Grade：-
- Qualification：-
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Overview
The AOC3870 is a dual N-channel MOSFET in an AlphaDFN 3.01x1.52_10 package, designed for common-drain applications with integrated ESD protection. It utilizes Trench Power MOSFET technology to achieve low on-resistance across various gate voltages. Key electrical parameters include a source-source breakdown voltage of 12V and a maximum gate-source voltage of ±8V. The static source-to-source on-resistance (RSS(ON)) is less than 2.8mΩ at VGS=4.5V, 3mΩ at VGS=4.0V, 3.2mΩ at VGS=3.8V, 3.7mΩ at VGS=3.1V, and 4.7mΩ at VGS=2.5V. The device supports a DC source current of 2.2A and a pulse source current of 25A.
Feature Summary
- Common drain configuration simplifies circuit design for load switch applications.
- Integrated ESD protection enhances battery performance and system safety.
- Trench Power MOSFET technology ensures low RSS(ON) for efficient power handling.
Applications
- Battery protection switches
- Mobile device battery charging circuits
- Mobile device battery discharging circuits
Procurement Notes
Verify the specific ordering suffix to confirm the tape and reel quantity, which is listed as 8000 units for the standard package form. Ensure compliance requirements such as RoHS and Halogen-Free status are confirmed against the latest manufacturer documentation before finalizing procurement orders.
Selection Notes
Select this component for designs requiring a dual N-channel MOSFET in a compact AlphaDFN package with common-drain topology. Consider the low RSS(ON) values at varying gate voltages when designing for different logic levels. Verify that the 12V breakdown voltage and thermal characteristics meet the specific power dissipation and junction temperature requirements of the target application.
Part Context
The AOC3870 belongs to Alpha & Omega Semiconductor's portfolio of Trench Power MOSFETs. It is part of a series of dual N-channel devices designed for mobile and battery-powered applications. The component is manufactured by Alpha & Omega Semiconductors, a company specializing in power management ICs and discrete semiconductors.
Replacement Considerations
Publicly documented similar parts include AOC3870A and AOC3870C from Alpha & Omega Semiconductors. These variants share the same functional description as 12V Common-Drain Dual N-Channel MOSFETs. Verify pinout compatibility and exact electrical specifications before substitution.
FAQ
What is the maximum source-source breakdown voltage?
The maximum source-source breakdown voltage (BVSSS) is 12V.
What is the typical forward source to source voltage?
The typical forward source to source voltage (VFSS) is 0.57V at VGS=3.8V and IS=5A.
What is the total gate charge?
The total gate charge (Qg) is typically 32nC.
