AOC3870C

$1.17

Description：MOSFET 2N-CH 12V 25A 10DFN
Series：-

SKU:719f1af7e3f8 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 12V 25A 10DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：-
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：25A (Ta)
Rds On (Max) @ Id, Vgs：3.8mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：32nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：3.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：10-SMD, No Lead
Supplier Device Package：10-AlphaDFN (3.01x1.52)
Grade：-
Qualification：-

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AOC3870C

Overview

The AOC3870C is a 12V Common-Drain Dual N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It utilizes Trench Power MOSFET technology to achieve ultra-low on-resistance, with RSS(ON) values of less than 3.8mΩ at VGS=4.5V and less than 5.6mΩ at VGS=2.5V. The device features an integrated ESD protection structure rated for HBM Class 2. It operates within a junction temperature range of -55°C to 150°C and supports a continuous source current of 25A. The component is housed in an AlphaDFN 3.01x1.52B_10 package.

Feature Summary

Trench Power MOSFET technology for low on-resistance
Integrated ESD protection for improved safety
Common drain configuration simplifies design

Applications

Battery protection switch
Mobile device battery charging
Mobile device battery discharging

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation before procurement. Confirm that the selected variant matches the required package type and tape/reel specifications. Ensure compliance with applicable export control regulations and legal requirements during the purchasing process.

Selection Notes

Select this component based on its 12V breakdown voltage and common-drain topology. Evaluate the thermal characteristics and maximum forward biased safe operating area for the intended load conditions. Verify that the gate-source voltage requirements align with the system's drive capabilities.

Part Context

The AOC3870C belongs to the AOC3870 series of dual N-channel MOSFETs from Alpha & Omega Semiconductor. Variants such as AOC3870A and AOC3870C share similar functional descriptions but may differ in specific electrical parameters or manufacturing revisions. This part is designed for power management applications requiring high efficiency and compact packaging.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official manufacturer resources for potential cross-references or updated product recommendations.