AOC4810

$0.71

Description：MOSFET 2N-CH 8ALPHADFN
Series：-

SKU:4bc284710b05 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 8ALPHADFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1130pF @ 15V
Power - Max：900mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-XFLGA Exposed Pad
Supplier Device Package：8-AlphaDFN (3.2x2)
Grade：-
Qualification：-

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AOC4810

Overview

The AOC4810 is a high-voltage N-channel dual MOSFET manufactured by Alpha & Omega Semiconductor. It features an 8-lead XFLGA package designed for surface-mount applications. The device supports a continuous drain current of 8A and operates within a temperature range of -55°C to 150°C junction temperature. Key electrical characteristics include a maximum power dissipation of 900mW and an input capacitance of 1130pF measured at 15V. This component serves as a reliable solution for power control in compact electronic designs.

Feature Summary

Dual N-channel configuration for efficient power switching
High-voltage capability ensuring reliable operation
Compact XFLGA package suitable for space-constrained layouts

Applications

Power control circuits
Switching applications requiring high voltage tolerance
Compact electronic device power management

Procurement Notes

Verify the specific datasheet version and manufacturer documentation to confirm exact electrical parameters and pinout configurations before integration. Ensure that the sourcing channel provides authentic components from Alpha & Omega Semiconductor Inc. to guarantee performance reliability and compliance with specified operational standards.

Selection Notes

Select this component when a dual N-channel MOSFET with high-voltage ratings is required in a small form factor. Consider the 900mW power dissipation limit and thermal management requirements for the XFLGA package. Evaluate the 1130pF input capacitance against switching speed needs in the target application circuit design.

Part Context

This part belongs to the Alpha & Omega Semiconductor lineup of high-voltage MOSFETs. It utilizes the XFLGA-8 package, which offers a low profile and robust thermal performance compared to traditional packages. The dual-channel architecture allows for simplified circuit designs in applications requiring multiple switching elements within a single footprint.