AOCA24106C

$1.28

Description：MOSFET 2N-CH 12V 20A 6DFN
Series：-

SKU:69f0881b69cc Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 12V 20A 6DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：-
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：20A (Ta)
Rds On (Max) @ Id, Vgs：5.6mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：2.7W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-SMD, No Lead
Supplier Device Package：6-AlphaDFN (1.9x1.6)
Grade：-
Qualification：-

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AOCA24106C

Overview

The AOCA24106C is a dual N-channel MOSFET in an AlphaDFN 1.9x1.6_6 package with a common-drain configuration. It features a source-source breakdown voltage of 12V and ultra-low on-resistance, ranging from less than 5.6mΩ at VGS=4.5V to 8.5mΩ at VGS=2.5V. The device supports a continuous DC source current of 20A and a pulse source current of 45A. Key electrical parameters include a gate threshold voltage of 0.4V to 1.1V, total gate charge of 16nC, and forward source-to-source voltage of 0.6V to 1V. Operating junction temperature ranges from -55°C to 150°C.

Feature Summary

Ultra-low RDS(ON) optimized for various gate drive voltages
Integrated ESD protection for enhanced battery safety
Common-drain configuration simplifies circuit design

Applications

Battery protection switches
Mobile device battery charging circuits
Mobile device battery discharging circuits

Procurement Notes

Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm package type and reel specifications. Ensure compliance with RoHS and Halogen-Free standards as stated in the datasheet. Confirm that the component meets all absolute maximum ratings for your intended operating conditions before finalizing procurement.

Selection Notes

Select this component when a low-profile dual N-channel solution with integrated ESD protection is required. The common-drain topology is suitable for applications needing simplified design. Evaluate the thermal impedance characteristics and ensure the PCB layout can support the specified power dissipation limits under expected load conditions.

Part Context

This part belongs to Alpha & Omega Semiconductor's trench power MOSFET family. It utilizes advanced technology to achieve low on-resistance while maintaining a compact footprint. The common-drain arrangement distinguishes it from standard single-ended configurations, offering specific advantages for parallel or switch-mode applications.