AOCA32317

$0.31

Description：MOSFET 2N-CH 30V 17A 10DFN
Series：-

SKU:19cdf186ef8c Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 17A 10DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：17A (Ta)
Rds On (Max) @ Id, Vgs：7.3mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：3.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：10-SMD, No Lead
Supplier Device Package：10-AlphaDFN (3.37x1.47)
Grade：-
Qualification：-

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AOCA32317

Overview

The AOCA32317 is a dual N-channel MOSFET in a common-drain configuration, utilizing AlphaDFNTM technology. It features a source-source breakdown voltage of 30V and a maximum continuous source current of 17A. The device achieves low on-resistance, with RSS(ON) below 7.3mΩ at VGS=10V and below 10.2mΩ at VGS=4.5V. Total gate charge is typically 50nC. Operating junction temperatures range from -55°C to 150°C, with power dissipation rated at 3.1W under standard conditions.

Feature Summary

Dual N-channel architecture with common-drain configuration for simplified circuit design
Low on-resistance performance optimized for high-efficiency switching applications
Integrated ESD protection capabilities meeting HBM Class 2 standards

Applications

Battery protection switches
Type-C PD load switches
Typical ESD protection circuits

Procurement Notes

Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation before procurement. Confirm that the package type matches the required AlphaDFNTM form factor. Ensure compliance with RoHS and Halogen-Free material requirements as specified in the datasheet. Validate thermal management solutions against the provided junction-to-ambient resistance data.

Selection Notes

Select this component based on the 30V source-source breakdown voltage and 17A continuous current rating. Evaluate the on-resistance values at the intended gate drive voltage (4.5V or 10V) to ensure efficiency targets are met. Consider the AlphaDFNTM package dimensions for PCB layout constraints and verify thermal dissipation capabilities within the operating temperature range.

Part Context

This part belongs to the AlphaDFNTM family of trench power MOSFETs designed for compact surface-mount applications. It integrates two independent N-channel FETs in a single package to reduce board space while maintaining high current handling capabilities suitable for portable electronics and power management systems.