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Product Detailed Parameters
- Description：MOSFET 2N-CH 22V 30A 10DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：22V
- Current - Continuous Drain (Id) @ 25°C：30A
- Rds On (Max) @ Id, Vgs：2.8mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：37nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 150°C
- Mounting Type：Surface Mount
- Package / Case：10-SMD, No Lead
- Supplier Device Package：10-AlphaDFN (3.4x1.96)
- Grade：-
- Qualification：-
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Overview
The AOCA36102E is a dual N-channel MOSFET in an AlphaDFNT 3.4x1.96_10 package, featuring a common-drain configuration with integrated ESD protection. It operates at a source-source breakdown voltage of 22V and supports a continuous DC source current of 30A. The device exhibits low on-resistance, specifically less than 2.8mΩ at VGS=4.5V and 4.6mΩ at VGS=2.5V. Key switching parameters include a total gate charge of 37nC, turn-on delay of 1.7µs, and fall time of 8.7µs. Thermal performance includes a maximum junction temperature of 150°C and a steady-state power dissipation of 40W.
Feature Summary
- Dual N-channel architecture with common-drain configuration for simplified circuit design
- Integrated electrostatic discharge (ESD) protection to enhance battery safety
- Low on-resistance optimized for mobile device charging applications
Applications
- Battery protection switches
- Mobile device battery charging circuits
- Mobile device battery discharging circuits
Procurement Notes
Verify the specific ordering suffix and tape & reel quantity against official Alpha & Omega Semiconductor documentation before procurement. Confirm that the component meets RoHS and halogen-free compliance requirements for your manufacturing process. Ensure the AlphaDFNT package dimensions align with your PCB footprint specifications.
Selection Notes
Select this component when a dual N-channel solution with common-drain topology is required for space-constrained mobile designs. Evaluate the thermal impedance characteristics if operating near the maximum junction temperature limit. Consider the gate threshold voltage range to ensure compatibility with standard logic-level drivers in battery management systems.
Part Context
This part belongs to Alpha & Omega Semiconductor's trench power MOSFET technology lineup. It is designed specifically for portable electronics where low resistance and high reliability are critical. The dual configuration allows for parallel operation or independent control within a single compact package.
Replacement Considerations
Consult official distributor databases for verified substitute part numbers from Alpha & Omega Semiconductor or other manufacturers offering equivalent 22V dual N-channel MOSFETs in similar packages.
