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The AOD1N60 is a 600V, 1.3A N-Channel MOSFET fabricated using an advanced high voltage process. It features a maximum drain-source voltage of 600V and a continuous drain current of 1.3A at 25°C case temperature. The device has a typical on-resistance of 9 ohms at VGS=10V and ID=0.65A. It operates within a junction temperature range of -50°C to 150°C and includes guaranteed avalanche capability.
Verify the specific package variant required, as the datasheet covers AOD1N60 (TO-252), AOU1N60 (TO-251/IPAK), and AOI1N60 (TO-251A). Confirm thermal management requirements against the specified junction-to-ambient resistance values for your mounting conditions. Ensure compliance with export control regulations applicable to semiconductor components.
Select this component for low-power offline AC-DC applications requiring 600V blocking capability. Consider the TO-252 package for surface mount implementations. Evaluate thermal dissipation needs based on the 45W power rating at 25°C case temperature. Verify that the 1.3A continuous current rating meets the load requirements under expected operating temperatures.
The AOD1N60 belongs to Alpha & Omega Semiconductor's lineup of N-Channel MOSFETs designed for general-purpose switching. It is part of a family including variants like AOU1N60 and AOI1N60 which share electrical characteristics but differ in physical packaging. These devices are intended for use in cost-sensitive, high-volume consumer and industrial power supplies.
Direct substitutes include AOU1N60 and AOI1N60, which share identical electrical specifications but utilize different packages (TO-251 and TO-251A respectively). Cross-referencing with other manufacturers' 600V, 1.3A N-Channel MOSFETs requires verifying pinout compatibility and thermal resistance parameters.