AOD2210

$0.48

Description：MOSFET N-CH 200V 3A/18A TO252
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:7a5851527630 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 200V 3A/18A TO252
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：3A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：105mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2065 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 100W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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AOD2210

Overview

The AOD2210 is a 200V N-Channel Power MOSFET utilizing Trench technology. It features a maximum drain current of 18A at VGS=10V and low on-resistance below 105mΩ at VGS=10V, or 120mΩ at VGS=5V. The device supports a continuous drain current of 45A and a pulsed current of 240A. Key dynamic parameters include a total gate charge of 40nC at 10V and a body diode reverse recovery time of 60ns. Thermal resistance from junction to case is 1.5°C/W.

Feature Summary

Optimized for fast-switching applications with low gate charge characteristics.
Features synchronous rectification capabilities for DC/DC and AC/DC converters.
Includes 100% Unclamped Inductive Switching (UIS) testing verification.

Applications

Synchronous Rectification in DC/DC Converters
Synchronous Rectification in AC/DC Converters
Industrial Drive Applications
Motor Drive Applications

Procurement Notes

Verify the specific package type required for your design, as the AOD2210 is available in TO-252 Tape & Reel and AOI2210 variants in TO-251A Tube formats. Confirm that the selected part number matches the intended form factor and minimum order quantity constraints before finalizing procurement orders.

Selection Notes

Select this component for designs requiring robust 200V blocking capability with efficient switching performance. Ensure the thermal management strategy accounts for the specified junction-to-case resistance. Verify that the gate drive voltage aligns with the RDS(ON) specifications for optimal conduction losses in the target application environment.

Part Context

This component belongs to Alpha & Omega Semiconductor's portfolio of power management devices. It is designed as a general-purpose high-voltage switch suitable for replacing older generation MOSFETs in power conversion circuits where efficiency and switching speed are critical performance metrics.

Replacement Considerations

Check datasheets for alternative 200V N-Channel MOSFETs with comparable RDS(ON) and Qg values. Ensure pinout compatibility if substituting directly into existing PCB layouts without redesign.