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Product Detailed Parameters
- Description：MOSFET N-CH 600V 14A TO252
- Series：aMOS5™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：280mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1350 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：138W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The AOD280A60 is a surface-mount N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing proprietary aMOS5 technology. It features a drain-source voltage of 600V and a maximum continuous drain current of 14A at case temperature. The device exhibits a typical on-resistance of 0.28 ohms at 10V gate drive. Packaged in a TO-252 (DPAK) format, it supports junction temperatures up to 150°C and includes an enhanced body diode for robust reverse recovery performance.
Feature Summary
- Proprietary aMOS5 technology enables low on-resistance and optimized switching parameters for improved electromagnetic interference performance.
- Enhanced body diode design provides robustness and fast reverse recovery characteristics suitable for demanding power conversion applications.
Applications
- Switching Mode Power Supplies with Power Factor Correction
- Flyback converter topologies
- LLC resonant converter designs
- Micro inverters with DC/AC inversion
Procurement Notes
Verify the specific package variant during procurement, as the datasheet indicates the AOI280A60 shares specifications but utilizes a TO-251A/IPAK package instead of the standard TO-252 DPAK form factor. Confirm RoHS compliance status and ensure the ordering suffix matches the required physical footprint for your PCB layout constraints.
Selection Notes
Select this component for high-efficiency power stages requiring low conduction losses and fast switching speeds. The TO-252 package offers a balance between thermal dissipation capabilities and space efficiency. Ensure adequate heatsinking or copper area is allocated to manage thermal resistance, given the 0.9°C/W junction-to-case rating under specified conditions.
Part Context
Alpha & Omega Semiconductor manufactures this device using advanced discrete semiconductor process technologies. The company integrates product design with packaging know-how to address complex power requirements in consumer electronics, industrial controls, and data center infrastructure. This part belongs to the aMOS5 family designed for high-volume power management solutions.
Replacement Considerations
The AOI280A60 is electrically equivalent but housed in a TO-251A/IPAK package. Verify pinout compatibility and thermal pad dimensions before substitution, as the physical footprint differs significantly from the TO-252 DPAK configuration used in the AOD280A60.
FAQ
What is the maximum repetitive avalanche energy rating?
The device has a rated repetitive avalanche energy of 60 mJ when tested with an inductance of 60mH and starting junction temperature of 25°C.
How does the body diode perform during reverse recovery?
The enhanced body diode features a reverse recovery time of 280ns and a peak reverse recovery current of 23A, ensuring robust performance in hard-switching applications.
