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Product Detailed Parameters
- Description：MOSFET N CH 100V 6.5A TO252
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：6.5A (Ta), 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：24mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1190 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 53.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The AOD2910 is a 100V N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a TO-252 (DPAK) surface-mount package with three pins. The device supports a continuous drain current of 6.5A at ambient temperature and 31A at case temperature. Power dissipation ratings are 2.5W at ambient and 53.5W at case temperature. The maximum on-resistance is 24mΩ.
Feature Summary
- N-Channel enhancement mode construction
- Low on-resistance for efficient power switching
- Surface mount DPAK package design
Applications
- DC-DC converter circuits
- Power management modules
- Load switching applications
Procurement Notes
Verify the specific manufacturer lot code and date code against the required production timeline, as component availability may vary across distributors. Confirm that the TO-252 package dimensions match the target PCB footprint exactly. Ensure thermal management requirements align with the specified ambient and case temperature power dissipation limits to prevent overheating during operation.
Selection Notes
Select this component when a 100V voltage rating and moderate current handling capability are required in a compact surface-mount form factor. Consider the 24mΩ on-resistance for efficiency calculations in low-voltage, high-current paths. Evaluate the thermal performance based on whether the application relies on ambient cooling or heatsink attachment to case temperature specifications.
Part Context
This part belongs to the N-Channel MOSFET category within Alpha & Omega Semiconductor's discrete transistor portfolio. It utilizes silicon gate technology for fast switching speeds. The TO-252 package provides a balance between electrical performance and board space efficiency for consumer and industrial electronics.
Replacement Considerations
Check datasheets for alternative N-Channel MOSFETs with matching 100V Vds and comparable Rds(on). Verify pinout compatibility for TO-252 packages before substitution. Ensure thermal resistance values support the existing circuit design constraints.
