ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 600V 2.5A TO252
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2Ohm @ 800mA, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：466 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：74W (Tc)
- Operating Temperature：-50°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Download product information
Overview
The AOD2HC60 is a 600V N-Channel MOSFET in a TO-252 (DPAK) package. It features a maximum drain-source voltage of 600V and a continuous drain current of 2.5A at 25°C case temperature. The device has a maximum on-resistance of 2Ω at VGS=10V and ID=0.8A, with a typical gate charge of 7.6nC. It supports a peak pulsed drain current of 14A and operates within a junction temperature range of -50°C to 150°C.
Feature Summary
- Designed for high performance and robustness in AC-DC applications using an advanced high-voltage process.
- Features guaranteed avalanche capability with 100% UIS testing.
- Provides low on-resistance and reduced input/reverse transfer capacitance for efficient switching.
- Includes 100% Rg testing to ensure gate resistance consistency.
Applications
- Offline power supply designs
- AC-DC converter circuits
Procurement Notes
Verify the specific part number against official Alpha & Omega Semiconductor documentation to confirm electrical ratings and package type. Ensure compatibility with target thermal management requirements and operating voltage levels. Confirm that the component meets necessary safety standards for the intended application environment.
Selection Notes
Select this component for designs requiring high voltage blocking capability and rugged avalanche performance. Consider the TO-252 package for surface-mount assembly where moderate power dissipation is needed. Evaluate thermal resistance values against system heat sinking capabilities to maintain junction temperatures within safe limits during operation.
Part Context
This N-Channel MOSFET belongs to Alpha & Omega Semiconductor's lineup of high-voltage discrete devices. It utilizes a specialized fabrication process optimized for offline power conversion topologies. The device integrates standard MOSFET functionality with enhanced reliability features such as verified avalanche energy handling.
Replacement Considerations
Consult official manufacturer substitution guides or datasheets for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing the original component in existing circuit designs.
