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Product Detailed Parameters
- Description：MOSFET N-CH 1000V 2A TO252
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1000 V
- Current - Continuous Drain (Id) @ 25°C：2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：9Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：580 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：83W (Tc)
- Operating Temperature：-50°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The AOD2N100 is an N-channel power MOSFET manufactured by Alpha & Omega Semiconductor. It features a maximum drain-source voltage (Vds) of 1000 V and a continuous drain current (Ids) of 2 A at case temperature. The device offers a maximum power dissipation of 83 W at case temperature and 2.5 W at ambient temperature. It utilizes a TO-252 (DPAK) surface-mount package with three pins. The component operates within a junction temperature range of -55°C to 175°C and complies with RoHS standards.
Feature Summary
- High-voltage capability suitable for demanding power switching applications
- Robust thermal performance with significant heat dissipation capacity at case temperature
- Designed for surface-mount assembly in compact electronic circuits
Applications
- High-voltage power supply units
- Industrial motor control systems
- Automotive electronics requiring high breakdown voltage
Procurement Notes
Verify the specific ordering suffix and packaging configuration, such as tape and reel or cut tape, against the manufacturer's official datasheet before procurement. Confirm that the component meets all required environmental compliance standards, including RoHS directives, and ensure the supplier provides valid traceability documentation for quality assurance purposes.
Selection Notes
Select this component when a circuit requires an N-channel MOSFET capable of blocking 1000 V while handling moderate continuous currents. The TO-252 package is appropriate for applications where board space is limited but adequate thermal management via a heatsink or copper pour is available. Ensure the gate drive voltage aligns with the device's threshold characteristics for optimal switching performance.
Part Context
This part belongs to Alpha & Omega Semiconductor’s portfolio of discrete power devices, which includes various MOSFETs and IGBTs. The company specializes in power semiconductor solutions for high-volume markets such as data centers, consumer electronics, and industrial controls. The AOD2N100 represents their expertise in high-voltage silicon technology designed for reliability and efficiency.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult the manufacturer's official replacement guide or cross-reference tools for verified alternatives that match the electrical specifications and pinout configuration.
