AOD32324

Overview

The AOD32324 is an N-channel Power MOSFET from Alpha & Omega Semiconductor, housed in a TO-252 (DPAK) surface-mount package. It features a drain-source voltage (Vdss) of 30 V and continuous drain current ratings of 33 A at ambient temperature (Ta) and 70 A at case temperature (Tc). The device exhibits a maximum on-resistance (Rds(on)) of 3.4 mΩ at Vgs = 10 V and Id = 69 A. Gate threshold voltage (Vgs(th)) is typically 2.3 V at Id = 250 µA. Total gate charge (Qg) is 53.5 nC at Vgs = 10 V. Input capacitance (Ciss) is 400 pF at Vds = 20 V. Maximum power dissipation is 6.2 W at Ta and 69 W at Tc. Operating junction temperature range is -55°C to 175°C.

Feature Summary

• N-channel enhancement mode metal-oxide-semiconductor field-effect transistor designed for high-current switching applications.
• Low on-resistance characteristics optimized for efficient power conversion and minimal conduction losses.
• Robust thermal performance with high case temperature current capability suitable for compact power designs.

Applications

• DC-DC converter output stages
• Synchronous rectification circuits
• Motor control load switches

Procurement Notes

Verify the specific suffix code against the manufacturer's official datasheet to confirm exact electrical tolerances and packaging variations. Ensure the component source is an authorized distributor to guarantee authenticity and traceability. Cross-reference the date code and lot number with the supplier's certificate of conformity. Confirm that the storage and handling conditions meet ESD protection standards during procurement and assembly processes.

Selection Notes

Select this component when a 30 V rating and high continuous current capacity are required in a TO-252 package. Evaluate the thermal resistance parameters relative to the PCB copper area to ensure adequate heat dissipation for the intended power dissipation levels. Compare the gate charge specifications against the driving circuit capabilities to optimize switching speed and minimize switching losses in the target application design.

Part Context

Alpha & Omega Semiconductor specializes in discrete power devices and wide bandgap solutions. The AOD32324 belongs to their portfolio of high-performance MOSFETs designed for advanced electronics. These components support applications requiring efficient power management, including data centers, automotive electronics, and industrial motor controls, leveraging integrated process technology and advanced packaging know-how.

Replacement Considerations

Check for direct substitutes within the same 30 V N-channel DPAK family from Alpha & Omega Semiconductor. Verify pinout compatibility and thermal pad configuration before substitution. Ensure replacement parts meet or exceed the original Rds(on), Vdss, and current ratings. Consult official cross-reference lists for validated alternatives.

FAQ

What is the maximum drain-source voltage for the AOD32324?

The maximum drain-source voltage (Vdss) is 30 V.

In which package is the AOD32324 available?

It is available in a TO-252 (DPAK) surface-mount package.

What is the typical gate threshold voltage?

The gate threshold voltage (Vgs(th)) is typically 2.3 V at a drain current of 250 µA.