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The AOD3C60 is a 600V N-Channel MOSFET in a TO-252 (DPAK) package. It features a maximum drain-source voltage of 600V and continuous drain current of 3A at 25°C case temperature, with a peak pulsed current of 19A. The device has a typical gate charge of 10.3nC and a maximum on-resistance of 1.4Ω at VGS=10V. Thermal resistance from junction to ambient is 55°C/W, while junction-to-case is 1.4°C/W. Operating temperatures range from -50°C to 150°C.
Verify the specific package type and electrical ratings against your design requirements before procurement. Confirm that the component meets all necessary safety and reliability standards for your intended application. Check for any obsolescence notices or alternative part recommendations from the manufacturer.
Consider the thermal management capabilities when selecting this component, as the junction-to-ambient thermal resistance is 55°C/W. Ensure that the gate drive circuitry can handle the typical gate charge of 10.3nC efficiently. Evaluate the maximum drain-source voltage and continuous drain current to ensure they meet the system's operational demands.
The AOD3C60 is part of Alpha & Omega Semiconductor's lineup of high-voltage MOSFETs. It is designed using an advanced process to deliver high performance in popular AC-DC applications. The device is suitable for consumer market applications and is not authorized for use in life support devices or systems without explicit authorization.
No publicly confirmed substitute part numbers are available in the provided documentation.
The maximum drain-source voltage (BV_DSS) of the AOD3C60 is 600V.
Yes, the AOD3C60 is 100% UIS (Unclamped Inductive Switching) tested to ensure guaranteed avalanche capability.