AOD3C60

AOD3C60

$0.31
  • Description:MOSFET N-CH 600V 3A TO252
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:e7eae02cd2d6 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 600V 3A TO252
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.4Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:648 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):89W (Tc)
  • Operating Temperature:-50°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252 (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

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AOD3C60

Overview

The AOD3C60 is a 600V N-Channel MOSFET in a TO-252 (DPAK) package. It features a maximum drain-source voltage of 600V and continuous drain current of 3A at 25°C case temperature, with a peak pulsed current of 19A. The device has a typical gate charge of 10.3nC and a maximum on-resistance of 1.4Ω at VGS=10V. Thermal resistance from junction to ambient is 55°C/W, while junction-to-case is 1.4°C/W. Operating temperatures range from -50°C to 150°C.

Feature Summary

  • Designed for high performance and robustness in AC-DC applications
  • Guaranteed avalanche capability with 100% UIS testing
  • Low RDS(on), Ciss, and Crss for efficient switching
  • Optimized for offline power supply designs

Applications

  • AC-DC power supplies
  • Offline power supply designs
  • Consumer market applications

Procurement Notes

Verify the specific package type and electrical ratings against your design requirements before procurement. Confirm that the component meets all necessary safety and reliability standards for your intended application. Check for any obsolescence notices or alternative part recommendations from the manufacturer.

Selection Notes

Consider the thermal management capabilities when selecting this component, as the junction-to-ambient thermal resistance is 55°C/W. Ensure that the gate drive circuitry can handle the typical gate charge of 10.3nC efficiently. Evaluate the maximum drain-source voltage and continuous drain current to ensure they meet the system's operational demands.

Part Context

The AOD3C60 is part of Alpha & Omega Semiconductor's lineup of high-voltage MOSFETs. It is designed using an advanced process to deliver high performance in popular AC-DC applications. The device is suitable for consumer market applications and is not authorized for use in life support devices or systems without explicit authorization.

Replacement Considerations

No publicly confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum drain-source voltage of the AOD3C60?

The maximum drain-source voltage (BV_DSS) of the AOD3C60 is 600V.

Is the AOD3C60 tested for avalanche capability?

Yes, the AOD3C60 is 100% UIS (Unclamped Inductive Switching) tested to ensure guaranteed avalanche capability.

AOD3C60AOD3C60
$0.31
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