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The AOD3N60 is a surface-mount N-channel power MOSFET from Alpha & Omega Semiconductor, housed in a TO-252 (DPAK) package. It features a drain-source voltage of 600V and a continuous drain current of 2.5A at 25°C case temperature. The device exhibits a maximum on-resistance of 3.5 ohms at VGS=10V and ID=1.25A. Key electrical parameters include a gate threshold voltage of 4.5V max, total gate charge of 12nC max, and input capacitance of 370pF max. Thermal characteristics specify a junction-to-case resistance of 2.2°C/W and a junction-to-ambient resistance of 55°C/W.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm the exact package variant and tape-and-reel specifications. Confirm RoHS compliance status and check for any recent Product Change Notices regarding packaging or material composition updates before finalizing procurement.
Select this component for designs requiring a 600V rating with moderate current handling in a compact surface-mount footprint. Evaluate thermal management requirements based on the specified junction-to-ambient resistance values. Ensure the driving circuit can provide sufficient gate voltage to achieve the minimum on-resistance specified in the static characteristics table.
This part belongs to the AOS family of 600V N-channel MOSFETs optimized for general-purpose switching. It shares design similarities with the through-hole AOU3N60 variant but utilizes a DPAK package for PCB integration. The series targets cost-sensitive consumer electronics and industrial power conversion systems.
No officially confirmed substitute part numbers are documented in the provided source material.
Yes, the datasheet confirms that the device undergoes 100% UIS (Unclamped Inductive Switching) testing and guarantees avalanche capability.
The absolute maximum rating for Gate-Source Voltage (VGS) is ±30V.