AOD409G

$0.32

Description：P
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:320c18752ac3 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：P
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：9A (Ta), 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：40mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：65 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2350 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：6.2W (Ta), 60W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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AOD409G

Overview

The AOD409G is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench power MOSFET technology to achieve low on-resistance and logic-level driving capabilities. The device features a Drain-Source Voltage (VDS) of -60V, a continuous drain current (ID) of -28A at VGS=-10V, and a maximum pulsed drain current (IDM) of -80A. Static drain-source on-resistance (RDS(ON)) is less than 40mΩ at VGS=-10V and less than 55mΩ at VGS=-4.5V. The component is housed in a TO-252 package with a junction temperature range of -55°C to 150°C.

Feature Summary

Advanced trench power MOSFET technology for optimized performance
Logic level driving capability for efficient gate control
100% Unclamped Inductive Switching (UIS) tested for reliability
RoHS and Halogen-Free compliant construction

Applications

Industrial applications
Motor drive systems

Procurement Notes

Verify the specific ordering suffix 'G' corresponds to the Tape & Reel form factor containing 2500 units per reel as documented in the official datasheet. Confirm that the procurement specification aligns with the TO-252 package type and the electrical parameters listed for the AOD409G variant. Ensure compliance requirements match the RoHS and Halogen-Free status indicated in the product summary.

Selection Notes

Select this component when designing circuits requiring a -60V P-Channel MOSFET with high current handling up to -28A. The low RDS(ON) values at both -10V and -4.5V gate voltages make it suitable for logic-level interface applications. Consider the thermal characteristics, specifically the junction-to-case resistance of 2.1°C/W, for adequate heatsinking in motor drive or industrial environments where power dissipation management is critical.

Part Context

The AOD409G belongs to the AOD409 series of P-Channel MOSFETs produced by Alpha & Omega Semiconductor. This series employs trench technology to deliver enhanced performance metrics compared to standard planar devices. The G suffix typically denotes the tape and reel packaging configuration, distinguishing it from other potential packaging options within the same electrical family.

Replacement Considerations

Direct replacement requires verifying pinout compatibility (Gate, Source, Drain) and ensuring the substitute part meets or exceeds the -60V voltage rating and -28A current capacity. Check that the replacement device supports the required logic-level gate drive thresholds and operates within the specified -55°C to 150°C junction temperature range.