AOD4120

AOD4120

  • Description:MOSFET N-CH 20V 25A TO252
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:7b3bc83b7d28 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N-CH 20V 25A TO252
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
  • Rds On (Max) @ Id, Vgs:18mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
  • Vgs (Max):±16V
  • Input Capacitance (Ciss) (Max) @ Vds:900 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta), 33W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252 (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

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AOD4120

Overview

The AOD4120 is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver excellent RDS(ON) performance combined with low gate charge characteristics. The device features a Drain to Source Voltage (Vdss) rating of 20 V. It is designed for high current and voltage capabilities, making it suitable for applications requiring efficient power switching.

Feature Summary

  • Advanced trench technology design for superior on-resistance
  • Low gate charge for efficient switching performance
  • N-Channel enhancement mode configuration

Applications

  • PWM control circuits
  • Load switching applications

Procurement Notes

Verify the specific part status before procurement as the component may be marked obsolete or not recommended for new designs. Confirm package availability and lead times through authorized distributors. Ensure compatibility with existing circuit requirements regarding voltage ratings and thermal management specifications prior to ordering.

Selection Notes

Select this component for applications requiring a 20 V N-Channel MOSFET with optimized switching efficiency. Consider the trade-off between low RDS(ON) and gate charge for PWM and load switch implementations. Verify that the thermal and current handling capabilities meet the specific system demands compared to alternative trench technology devices.

Part Context

Alpha & Omega Semiconductor specializes in discrete power devices and power management ICs. The AOD4120 belongs to their portfolio of Power MOSFETs designed for high-volume applications including consumer electronics, industrial controls, and power supplies. The company integrates process technology and packaging know-how to address complex power requirements.

FAQ

What type of technology does the AOD4120 utilize?

The AOD4120 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Is the AOD4120 suitable for PWM applications?

Yes, the device is explicitly stated to be suitable for use in PWM and load switching applications.

AOD4120AOD4120

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