AOD4132

$1.41

Description：MOSFET N-CH 30V 85A TO252
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0c40ae970efd Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 85A TO252
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：76 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4400 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 100W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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AOD4132

Overview

The AOD4132 is a 30V N-Channel MOSFET utilizing advanced trench technology. It features a maximum continuous drain current of 85A at VGS=10V and a typical on-resistance below 4mΩ at VGS=10V or 6mΩ at VGS=4.5V. The device supports a gate-source voltage of ±20V, with a breakdown voltage of 30V. Thermal characteristics include a junction-to-case resistance of 0.8°C/W and a power dissipation rating of 100W at TC=25°C. Total gate charge is typically 63nC at VGS=10V.

Feature Summary

Advanced trench technology provides low gate charge and low gate resistance for efficient switching performance.
Capable of handling high pulsed avalanche energy (112mJ) with inductance up to 0.1mH.
Manufactured with RoHS compliance and halogen-free materials.

Applications

Low side switch applications in CPU core power conversion circuits.

Procurement Notes

Verify the specific datasheet revision and manufacturing date code upon procurement. Confirm that the component meets the required environmental standards, such as RoHS compliance and halogen-free status, particularly if the data code is prior to September 1st, 2008. Ensure the package type matches the intended PCB footprint design.

Selection Notes

Select this component when a 30V N-Channel MOSFET with high current capability (85A) and low on-resistance is required. Consider the thermal management requirements based on the junction-to-case resistance. Verify that the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance.

Part Context

The AOD4132 belongs to Alpha & Omega Semiconductor's lineup of N-Channel MOSFETs designed for power switching applications. It is housed in a TO-252 (D-PAK) package, suitable for surface-mount assembly. The device is part of a series optimized for low conduction losses and fast switching speeds.