AOD413A

$0.83

Description：MOSFET P-CH 40V 12A TO252
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4d83b0c79394 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 40V 12A TO252
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：44mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1125 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 50W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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AOD413A

Overview

The AOD413A is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a Drain-Source Voltage (VDS) of -40V and a Continuous Drain Current (ID) of -12A at VGS = -10V. The maximum On-State Resistance (RDS(ON)) is less than 44mΩ at VGS = -10V and less than 66mΩ at VGS = -4.5V. It is housed in a TO-252 (DPAK) package with a Maximum Junction Temperature of 175°C.

Feature Summary

Advanced trench technology design for excellent RDS(ON) performance
Low gate charge characteristics
Excellent thermal resistance suitable for high current load applications
100% Unclamped Inductive Switching (UIS) tested

Applications

High current load applications
Power management circuits requiring P-channel switching
Consumer electronic power stages

Procurement Notes

Verify the component datasheet revision and manufacturing date code against the latest official Alpha & Omega Semiconductor documentation. Confirm that the specific unit received matches the TO-252 (DPAK) package outline and pin configuration. Ensure compliance with consumer market qualification standards as defined by the manufacturer.

Selection Notes

Select this component for designs requiring a -40V P-Channel MOSFET with a continuous drain current rating of -12A. Consider the thermal resistance characteristics of the DPAK package when determining heatsinking requirements. Verify that the gate drive voltage meets the threshold for the required on-resistance specifications.

Part Context

The AOD413A belongs to the family of P-Channel Enhancement Mode Field Effect Transistors produced by Alpha & Omega Semiconductor. It is designed using trench technology to optimize conduction losses and switching efficiency within a surface-mountable TO-252 (DPAK) footprint.