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The AOD4160 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a maximum drain-source voltage of -20V and a continuous drain current of -58A at VGS = -10V. Key electrical parameters include an RDS(on) of less than 4.5mΩ at VGS = -10V and less than 7.5mΩ at VGS = -4.5V. It is housed in a DPAK package, suitable for high-current load applications.
Verify the specific datasheet version and ordering information directly with Alpha & Omega Semiconductor or authorized distributors. Confirm compliance with RoHS standards and ensure the package type matches design requirements. Check for any recent product change notices that may affect specifications or availability.
Select the AOD4160 for applications requiring high current handling and low conduction losses. Consider the thermal performance of the DPAK package for heat dissipation needs. Ensure the gate drive voltage supports the specified RDS(on) ratings for optimal efficiency.
This component belongs to the family of P-Channel MOSFETs from Alpha & Omega Semiconductor. These devices are designed for general-purpose power switching applications where low on-resistance and robust performance are critical. The DPAK package provides a balance of electrical performance and thermal management capabilities.