ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 40V 10A/35A TO252
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1200 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 50W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Download product information
Overview
The AOD4186 is a 40V N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve extremely low on-resistance, making it suitable for low voltage inverter applications. The device features a TO-252 (D-Pak) package with an absolute maximum drain-source voltage of 40V and a gate-source voltage rating of ±20V. At VGS=10V, the maximum on-resistance is 15mΩ, while at VGS=4.5V, it is 19mΩ. The continuous drain current reaches 35A at TC=25°C and 27A at TA=70°C. The junction temperature range spans from -55°C to 175°C.
Feature Summary
- Advanced trench MOSFET technology combined with a low resistance package for high efficiency
- Extremely low on-state drain-source resistance across standard gate drive voltages
- Validated for 100% unclamped inductive switching (UIS) testing
- RoHS compliant and halogen-free construction
Applications
- Low voltage inverter circuits
- Power management systems requiring high thermal stability
- General purpose switching applications within specified voltage limits
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm datasheet revision status matches design requirements. Ensure packaging specifications align with assembly line capabilities. Validate compliance with applicable export control regulations and RoHS standards prior to integration into final products.
Selection Notes
Evaluate thermal performance based on specific board copper area and ambient conditions. Consider derating curves for continuous operation above 25°C case temperature. Verify gate drive voltage compatibility with the specified RDS(ON) thresholds. Assess avalanche energy ratings if used in inductive load environments.
Part Context
This component belongs to the AOS D-Pak series of power MOSFETs designed for surface mount applications. It shares the industry-standard TO-252 footprint common in various power electronics designs. The device represents a balance between current handling capability and thermal dissipation for compact circuit layouts.
Replacement Considerations
Cross-reference pinout configurations and thermal resistance values when substituting. Verify that alternative devices meet or exceed the 40V breakdown voltage and 15mΩ on-resistance specifications. Check package dimensions for mechanical fitment compatibility.
