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The AOD421 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver low on-resistance and gate charge. The device features a drain-source voltage (Vdss) of -20V and a continuous drain current (Id) of 12.5A at 25°C case temperature. Key electrical parameters include an on-resistance (Rds(on)) of less than 22 milliohms at Vgs = -10V and Id = -12.5A, and less than 28 milliohms at Vgs = -4.5V. The component is housed in a TO-252 package with a maximum power dissipation of 2W at ambient temperature.
Verify the specific ordering suffix and package variant when sourcing, as manufacturers may update part markings or packaging formats over time. Confirm RoHS compliance status and moisture sensitivity level requirements against your assembly process specifications. Ensure the supplier provides valid traceability documentation for quality assurance purposes.
Select this component for low-voltage DC-DC converters or battery-powered systems requiring efficient P-channel switching. The logic-level gate threshold allows direct driving from standard microcontrollers without additional level shifting. Consider thermal management constraints given the 2W power dissipation rating in the TO-252 package.
This device belongs to Alpha & Omega Semiconductor's portfolio of trench MOSFETs designed for high-efficiency power applications. It serves as a compact solution for replacing older planar technologies in space-constrained designs. The TO-252 form factor facilitates automated surface-mount assembly while providing adequate thermal performance for moderate current loads.
Publicly confirmed substitute part numbers are not available in the provided source material.