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The AOD423 is a P-Channel AlphaSGT™ MOSFET featuring advanced trench technology for low on-resistance and gate charge. It operates with a drain-source voltage of -30V and supports a continuous drain current of -70A at VGS=-20V. The device offers an RDS(ON) of less than 6.2mΩ at VGS=-20V and less than 8mΩ at VGS=-10V in the TO-252 package. It includes 100% UIS and Rg testing, with a junction temperature range of -55°C to 175°C.
Verify the specific ordering suffix matches the required package type: AOD423 for TO-252 (DPAK), AOI423 for TO-251A (IPAK), or AOY423 for TO-251B (IPAK short lead). Confirm tape and reel quantities are appropriate for the manufacturing process. Ensure compliance with export control regulations and verify product suitability for the intended application before procurement.
Select this component for designs requiring robust P-Channel switching with high current capabilities up to 70A. The low gate charge facilitates efficient driver design, while the rugged UIS rating ensures reliability in inductive load environments. Consider the thermal dissipation requirements based on the chosen package variant and PCB copper area for optimal heat spreading.
Manufactured by Alpha & Omega Semiconductor, the AOD423 belongs to the AlphaSGT™ family utilizing advanced trench MOSFET technology. This series focuses on optimizing on-resistance and switching speed for power management applications. The device is part of a broader portfolio including N-Channel variants and other low-voltage power switches designed for efficiency and thermal performance.
Direct substitutes include AOI423 (TO-251A) and AOY423 (TO-251B) which share identical electrical specifications but differ in physical packaging. Verify pinout compatibility and thermal pad dimensions when transitioning between TO-252 and IPAK form factors.
The device supports a pulsed drain current (IDM) of -200A.
Yes, the datasheet confirms that 100% of units undergo Unclamped Inductive Switching (UIS) testing.