AOD4504

$0.94

Description：MOSFET N-CH 200V 1.5A/6A TO252
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2019eb004530 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 200V 1.5A/6A TO252
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：1.5A (Ta), 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：400mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：115 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：328 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 42.5W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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AOD4504

Overview

The AOD4504 is a 200V N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a maximum drain-source voltage (BVDSS) of 200V and a continuous drain current (ID) of 6A at VGS=10V. The static drain-source on-resistance (RDS(ON)) is less than 400mΩ at VGS=10V. The device operates within a junction temperature range of -55°C to 175°C and utilizes a TO-252 (DPAK) package.

Feature Summary

Advanced trench MOSFET technology combined with low resistance packaging for extremely low RDS(ON).
100% Unclamped Inductive Switching (UIS) tested for enhanced reliability in inductive loads.
100% Gate Resistance (Rg) tested to ensure consistent switching performance.

Applications

Boost converters
Synchronous rectifiers
Consumer power supplies
Telecom power supplies
Industrial power supplies
LED backlighting

Procurement Notes

Verify the component status and specific ordering suffixes against the manufacturer's official datasheet before procurement. Confirm that the TO-252 package dimensions match the target PCB footprint. Ensure compliance with RoHS standards if required by the end application specifications.

Selection Notes

Select this component for applications requiring high voltage blocking capability up to 200V with moderate current handling. Consider the thermal characteristics, specifically the junction-to-case thermal resistance, when designing heatsinking solutions. Evaluate gate charge requirements to ensure compatibility with the intended driver circuitry.

Part Context

This part belongs to the AOD series of N-Channel Enhancement Mode Field Effect Transistors from Alpha & Omega Semiconductor. These devices utilize advanced trench technology to optimize on-resistance and switching speeds, targeting efficiency improvements in various power conversion topologies.