AOD452

AOD452

$0.19
  • Description:MOSFET N-CH 25V 55A TO252
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:a5f7558a612e Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 25V 55A TO252
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):25 V
  • Current - Continuous Drain (Id) @ 25°C:55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:8.5mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1476 pF @ 12.5 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta), 51.5W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252 (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

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AOD452

Overview

The AOD452 is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver low on-resistance and gate charge. The device features a drain-source voltage of 25V and a continuous drain current of 55A at VGS=10V. On-resistance is specified as less than 8.5mΩ at VGS=10V and less than 14mΩ at VGS=4.5V. It is housed in a TO-252 package with a maximum junction temperature of 175°C.

Feature Summary

  • Advanced trench technology design for excellent RDS(ON) performance
  • Low gate charge characteristics for efficient switching
  • Suitable for PWM, load switching, and general purpose applications

Applications

  • Pulse Width Modulation (PWM)
  • Load Switching
  • General Purpose Applications

Procurement Notes

Verify the component status and availability through official manufacturer channels or authorized distributors. Confirm that the specific lot and revision match project requirements. Ensure compliance with consumer market qualification standards as defined by the manufacturer. Check for any specific handling or storage instructions relevant to the MOSFET technology.

Selection Notes

Select this component for applications requiring a 25V N-Channel MOSFET with high current capability up to 55A. Consider the thermal resistance values when designing heatsinking solutions. Evaluate the gate charge parameters against driver capabilities to ensure optimal switching speeds. Verify that the operating temperature range meets the environmental conditions of the target system.

Part Context

The AOD452 belongs to the family of N-Channel Enhancement Mode Field Effect Transistors from Alpha & Omega Semiconductor. It is designed using SDMOSTM trench technology, which combines low on-resistance with low gate charge. This technology aims to provide outstanding efficiency with controlled switching behavior for power management applications.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum drain-source voltage for the AOD452?

The maximum drain-source voltage (BVDSS) for the AOD452 is 25V.

Is the AOD452 tested for avalanche ruggedness?

Yes, the AOD452 is 100% UIS (Unclamped Inductive Switching) tested.

What is the typical total gate charge at VGS=10V?

The typical total gate charge (Qg) at VGS=10V is 32nC.

AOD452AOD452
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