SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AOD452 is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver low on-resistance and gate charge. The device features a drain-source voltage of 25V and a continuous drain current of 55A at VGS=10V. On-resistance is specified as less than 8.5mΩ at VGS=10V and less than 14mΩ at VGS=4.5V. It is housed in a TO-252 package with a maximum junction temperature of 175°C.
Verify the component status and availability through official manufacturer channels or authorized distributors. Confirm that the specific lot and revision match project requirements. Ensure compliance with consumer market qualification standards as defined by the manufacturer. Check for any specific handling or storage instructions relevant to the MOSFET technology.
Select this component for applications requiring a 25V N-Channel MOSFET with high current capability up to 55A. Consider the thermal resistance values when designing heatsinking solutions. Evaluate the gate charge parameters against driver capabilities to ensure optimal switching speeds. Verify that the operating temperature range meets the environmental conditions of the target system.
The AOD452 belongs to the family of N-Channel Enhancement Mode Field Effect Transistors from Alpha & Omega Semiconductor. It is designed using SDMOSTM trench technology, which combines low on-resistance with low gate charge. This technology aims to provide outstanding efficiency with controlled switching behavior for power management applications.
No public confirmed substitute part numbers are available in the provided documentation.
The maximum drain-source voltage (BVDSS) for the AOD452 is 25V.
Yes, the AOD452 is 100% UIS (Unclamped Inductive Switching) tested.
The typical total gate charge (Qg) at VGS=10V is 32nC.