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Product Detailed Parameters
- Description：MOSFET N-CH 105V 40A TO252
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：105 V
- Current - Continuous Drain (Id) @ 25°C：40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：28mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：2445 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2.3W (Ta), 100W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Download product information
Overview
The AOD464 is a 105V N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver excellent RDS(ON) with low gate charge, making it suitable for high voltage synchronous rectification, load switching, and general-purpose applications. The device is housed in a TO-252 (D-PACK) package. Key electrical parameters include a drain-source voltage of 105V, a continuous drain current of 40A at VGS=10V, and an on-state resistance of less than 28mΩ at VGS=10V with 20A current. It features a maximum junction temperature range of -55°C to 175°C.
Feature Summary
- Advanced trench technology design providing excellent on-resistance and low gate charge
- Suitable for high voltage synchronous rectification and load switching applications
- 100% Unclamped Inductive Switching (UIS) tested for avalanche ruggedness
- RoHS compliant and halogen-free construction
Applications
- High voltage synchronous rectification
- Load switching circuits
- General purpose power switching applications
Procurement Notes
Verify the specific datasheet revision and manufacturing date code when sourcing components, as product specifications may be subject to change without notice. Confirm that the received parts meet the required environmental standards, such as RoHS compliance and halogen-free status, particularly if the data code predates September 1st, 2008. Ensure compatibility with the intended thermal management strategy given the junction-to-case and junction-to-ambient thermal resistance values provided in the official documentation.
Selection Notes
Select the AOD464 for applications requiring a 105V breakdown voltage and robust performance in synchronous rectification or load switching roles. Consider its low gate charge and fast switching characteristics for efficiency-critical designs. Evaluate the thermal requirements based on the specified junction-to-case and junction-to-ambient thermal resistances, ensuring adequate heatsinking or PCB copper area to maintain junction temperatures within the 175°C maximum limit under expected operating conditions.
Part Context
The AOD464 belongs to the family of N-Channel MOSFETs produced by Alpha & Omega Semiconductor Inc., designed using advanced trench technology. This technology focuses on minimizing on-resistance while maintaining low gate charge for improved switching efficiency. The component is packaged in a TO-252 (D-PACK) format, which facilitates surface-mount installation and provides effective thermal dissipation capabilities for power electronics applications.
Replacement Considerations
No public confirmed substitute part numbers are available in the source material.
FAQ
Is the AOD464 rated for unclamped inductive switching?
Yes, the AOD464 is 100% UIS tested, indicating it has been verified for avalanche ruggedness under unclamped inductive switching conditions.
What is the maximum junction temperature for the AOD464?
The maximum junction temperature for the AOD464 is 175°C, as specified in the absolute maximum ratings and thermal characteristics sections of the datasheet.
