SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AOD478 is a 100V N-Channel MOSFET utilizing advanced trench technology. It features a maximum drain-source voltage of 100V and a continuous drain current of 11A at 25°C. The on-resistance is less than 140mΩ at VGS=10V and less than 152mΩ at VGS=4.5V. The device supports a pulsed drain current of 24A and operates within a junction temperature range of -55°C to 175°C. It includes 100% UIS and Rg testing.
Verify the specific package variant required, as the datasheet covers TO-252, DPAK, TO-251A, and IPAK configurations. Confirm thermal management requirements align with the specified junction-to-ambient or junction-to-case resistance values based on your PCB copper area and airflow conditions. Ensure component suitability for the intended application scope.
Select this component for applications requiring high voltage blocking capability combined with efficient synchronous rectification. The low gate charge and fast switching times support high-frequency operation. Evaluate thermal performance against the derating curves provided for continuous and pulsed current loads in your specific enclosure environment.
This part belongs to the Alpha & Omega Semiconductor N-Channel MOSFET family designed for surface-mount power applications. It utilizes silicon planar trench technology to achieve superior on-resistance characteristics compared to standard planar devices. The product line targets efficiency improvements in various DC-DC conversion topologies.
The AOI478 is documented as a companion part within the same general description. Verify pinout compatibility and exact electrical parameter tolerances before substitution. No other direct substitute part numbers are confirmed in the provided documentation.
The maximum junction temperature is 175°C.
Yes, the device undergoes 100% UIS testing.