ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 600V 4A TO252
- Series：aMOS™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：900mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：4.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：263 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：56.8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Download product information
Overview
The AOD4S60 is a 600V N-Channel Power MOSFET from Alpha & Omega Semiconductor, utilizing the advanced αMOSTM high voltage process. It features a maximum drain-source voltage of 600V and a continuous drain current of 4A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.9Ω at VGS=10V and ID=2A. Key dynamic parameters include a typical total gate charge of 6nC and an output capacitance energy (Eoss) of 1.5mJ at 400V. It supports a pulsed drain current of 16A and has been tested for 100% UIS capability.
Feature Summary
- Fabricated using the advanced αMOSTM high voltage process designed for robust switching performance.
- Features low on-resistance and gate charge to facilitate rapid adoption in offline power supply designs.
- Includes guaranteed avalanche capability with 100% UIS testing for enhanced reliability.
Applications
- Offline power supply designs
- Switching applications requiring high voltage ruggedness
Procurement Notes
Verify the specific package variant required, as the datasheet covers TO-252 (AOD), TO-251A (AOI), and IPAK (AOU). Confirm RoHS compliance status if halogen-free requirements are necessary, noting that 'L' suffixes may apply to other parts in this family but require explicit datasheet confirmation for this specific part number. Ensure the selected component matches the intended thermal management strategy given the junction-to-ambient resistance values.
Selection Notes
Select the AOD4S60 when designing circuits requiring 600V blocking capability with moderate current handling around 4A. Consider the 0.9Ω on-resistance for conduction loss calculations at VGS=10V. The low gate charge of 6nC suggests suitability for drivers with limited current sourcing capabilities. Evaluate the thermal constraints based on the 55°C/W junction-to-ambient resistance for PCB-mounted applications without additional heatsinking.
Part Context
This component belongs to the αMOSTM series of high-voltage power transistors manufactured by Alpha & Omega Semiconductor. The series is characterized by optimized trade-offs between on-resistance, gate charge, and avalanche ruggedness. The AOD4S60 specifically targets surface-mount applications where space efficiency and switching performance are critical for offline power conversion topologies.
Replacement Considerations
Direct pin-compatible replacements within the same manufacturer's portfolio include AOI4S60 (TO-251A package) and AOU4S60 (IPAK package). Verify electrical parameter equivalence before substitution across different package types.
