AOD4T60

Description：MOSFET N-CHANNEL 600V 4A TO252
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:4fdbd8d60914 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CHANNEL 600V 4A TO252
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.1Ohm @ 1A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：460 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：83W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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AOD4T60

Overview

The AOD4T60P is a 600V N-Channel MOSFET utilizing AlphaMOS-II trench technology in a TO-252 (DPAK) package. It features a maximum drain-source voltage of 600V, continuous drain current of 4A at case temperature, and peak pulsed current of 16A. The device exhibits a maximum on-resistance of 2.1Ω at 10V gate drive and a typical total gate charge of 8.3nC. It includes 100% unclamped inductive switching (UIS) testing and dv/dt ruggedness verification.

Feature Summary

Utilizes AlphaMOS-II trench technology for low on-resistance and high current capability
Features low input capacitance and reverse transfer capacitance for efficient switching
Includes 100% verified unclamped inductive switching (UIS) ruggedness
RoHS and halogen-free compliant construction

Applications

General lighting for LED and CCFL systems
AC/DC power supplies for industrial applications
AC/DC power supplies for consumer electronics
AC/DC power supplies for telecom equipment

Procurement Notes

Verify the specific ordering suffix to confirm the package type, as the 'P' suffix indicates the TO-252 tape and reel configuration. Confirm that the component meets RoHS and halogen-free compliance requirements for your assembly process. Ensure the design accounts for the specified junction temperature limits and thermal resistance values during operation.

Selection Notes

Select this component for designs requiring 600V blocking capability with moderate current handling in surface-mount configurations. Consider the 2.1Ω maximum on-resistance for conduction loss calculations. Verify that the 8.3nC gate charge aligns with the driver capabilities of the target application circuit.

Part Context

This part belongs to the Alpha & Omega Semiconductor AOD series of N-Channel MOSFETs. It is manufactured using AlphaMOS-II trench technology. The datasheet also references the AOI4T60P variant, which utilizes a TO-251 (IPAK) tube package instead of the TO-252 tape and reel format.