SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AOD504 is a 25V N-Channel AlphaMOS power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve very low on-resistance and high current capability. The device features a Drain-Source Voltage (VDS) of 25V, a continuous drain current (ID) of 46A at TC=25°C, and a maximum pulsed drain current (IDM) of 170A. The static drain-source on-resistance (RDS(ON)) is less than 5mΩ at VGS=10V and less than 10mΩ at VGS=4.5V. It is housed in a TO-252 (DPAK) package with a junction temperature range of -55°C to 175°C.
Verify the specific manufacturer lot code and date code upon receipt to ensure component authenticity. Confirm that the delivered units match the AOD504 part number exactly. Check for physical damage to the TO-252 package leads before installation. Ensure storage conditions comply with moisture sensitivity level requirements if applicable. Review the datasheet for any recent product change notices or design revisions.
Select this component for low-voltage, high-current switching applications requiring efficient conduction at 4.5V logic levels. The low RDS(on) minimizes conduction losses in power stages. Consider the thermal resistance values when designing heatsinking solutions. Ensure the operating voltage does not exceed the 25V breakdown rating. Evaluate the gate charge specifications against the driving circuit capabilities.
This component belongs to the AlphaMOS series from Alpha & Omega Semiconductor Inc., focusing on low-voltage power management solutions. The TO-252 package provides a balance between power handling and surface-mount convenience. It is designed primarily for consumer market applications as stated in the general description.
No public confirmed substitute part numbers are available in the provided documentation.
The maximum pulsed drain current (IDM) is 170A.
No, the product is designed and qualified for the consumer market. Applications as critical components in life support devices or systems are not authorized.
The Gate Threshold Voltage (VGS(th)) ranges from 1.6V to 2.4V at TJ=25°C.