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The AOD528 is a 30V N-Channel AlphaMOS power MOSFET in a TO-252 (DPAK) package. It features a maximum drain-source voltage of 30V and a continuous drain current of 50A at TC=25°C. The on-resistance is less than 5.4mΩ at VGS=10V and less than 9.5mΩ at VGS=4.5V. Total gate charge is 18nC at 10V and 8.8nC at 4.5V. Avalanche energy capability is 13mJ with L=0.1mH. Thermal resistance junction-to-case is 3°C/W, and junction-to-ambient is 64°C/W. Operating temperature range is -55°C to 175°C.
Verify the specific datasheet revision against the manufacturer's official documentation before finalizing design specifications. Confirm that the TO-252 package dimensions align with the target PCB footprint requirements. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under actual operating conditions.
Select this component when a low-voltage, high-current switching solution is required for compact designs. The low on-resistance at 4.5V makes it suitable for logic-level control applications. Consider the thermal characteristics and package limitations when designing for high-power dissipation scenarios or elevated ambient temperatures.
This device belongs to the AlphaMOS family from Alpha & Omega Semiconductor Inc., utilizing advanced trench technology. It is designed as a surface-mount component intended for efficient power conversion and switching tasks within modern electronic systems requiring robust performance in small form factors.
Consult official manufacturer substitution lists for verified alternatives. Cross-reference pinouts and electrical parameters carefully if considering generic equivalents to ensure compatibility with existing circuit designs.