AOD5B65MQ1E

Overview

The AOD5B65MQ1E is a 650V AlphaIGBT in a TO-252 package, featuring a copacked soft and fast recovery anti-parallel diode. It supports a continuous collector current of 4A at 25°C and 5A at 100°C case temperature, with a pulsed current rating of 15A. The device exhibits a maximum VCE(sat) of 2.7V at 25°C and 2.89V at 150°C for IC=5A. Total gate charge is 8.8nC, while switching energies at 150°C are Eon=0.09mJ and Eoff=0.06mJ. Diode reverse recovery time is 74ns with Qrr of 0.11mC. Thermal resistance is 2.4°C/W (junction-to-case) for the IGBT and 6.8°C/W for the diode.

Feature Summary

• Latest AlphaIGBT technology providing high short-circuit ruggedness with a 5ms withstand time.
• Integrated very fast and soft antiparallel diode designed to minimize EMI through lower turn-on switching losses.
• High electrostatic discharge (ESD) protection capability meeting HBM Class 2 standards.

Applications

• Motor drives
• Home appliance applications
• Other hard switching applications

Procurement Notes

Verify the specific ordering suffix 'Q1E' against the manufacturer's official documentation to confirm tape and reel packaging specifications. Ensure that the component meets all applicable export control rules and regulatory requirements for the intended destination before finalizing procurement plans.

Selection Notes

Select this component for circuits requiring 650V blocking voltage and integrated freewheeling diode functionality. Evaluate thermal management based on the specified junction-to-case resistances and power dissipation limits. Confirm that the operating junction temperature remains within the -55°C to 150°C range during all operational states.

Part Context

This part belongs to the AlphaIGBT family from Alpha & Omega Semiconductor Inc., utilizing advanced trench gate technology. It is housed in a surface-mount TO-252 (DPAK) package suitable for automated assembly processes. The device integrates both N-channel IGBT and diode functions into a single semiconductor die.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided datasheet or verified source material.

FAQ

What is the maximum short-circuit withstand time for the AOD5B65MQ1E?

The device can withstand a short circuit for up to 5 milliseconds under conditions where VGE=15V, VCC≤400V, and TJ≤150°C.

How does the integrated diode perform during reverse recovery?

The anti-parallel diode features a reverse recovery time (trr) of 74ns and a reverse recovery charge (Qrr) of 0.11mC at 150°C, contributing to improved EMI performance.

What is the total gate charge required to switch this IGBT?

The total gate charge (Qg) is typically 8.8nC when tested at VGE=15V, VCC=520V, and IC=5A.