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Product Detailed Parameters
- Description：IGBT 650V 10A TO-252
- Series：Alpha IGBT™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：10:00 AM
- Current - Collector Pulsed (Icm)：15 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 5A
- Power - Max：52 W
- Switching Energy：81µJ (on), 49µJ (off)
- Input Type：Standard
- Gate Charge：9.2 nC
- Td (on/off) @ 25°C：8ns/73ns
- Test Condition：400V, 5A, 60Ohm, 15V
- Reverse Recovery Time (trr)：170 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252 (DPAK)
- Grade：-
- Qualification：-
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Overview
The AOD5B65N1 is a surface-mount Insulated Gate Bipolar Transistor (IGBT) manufactured by Alpha & Omega Semiconductor. It features a collector-emitter voltage rating of 650V and a continuous collector current of 5A, with a pulsed current capability of 15A. The device is housed in a TO-252 (DPAK) package and offers a maximum power dissipation of 21W. Key electrical parameters include an on-state voltage of approximately 2.3V at rated current, a gate charge of 9.2nC, and switching energies of 81μJ for turn-on and 49mJ for turn-off.
Feature Summary
- High-voltage insulation with 650V collector-emitter breakdown capability
- Surface-mount construction in a compact TO-252 package
- Fast switching performance with low gate charge characteristics
Applications
- High-frequency power switching circuits
- Industrial motor drive inverters
- Uninterruptible power supply (UPS) systems
Procurement Notes
Verify the manufacturer part number against official Alpha & Omega Semiconductor documentation to confirm specifications. Ensure the component matches the required 650V rating and TO-252 package type. Check for RoHS compliance status if environmental regulations apply. Confirm that the supplier provides valid traceability data and authentic sourcing channels to avoid counterfeit components.
Selection Notes
Select this IGBT when a 650V blocking voltage and moderate current handling are required in a surface-mount form factor. Consider the thermal resistance of the TO-252 package for heat dissipation requirements. Evaluate the switching energy losses against the application's frequency constraints. Ensure the gate drive circuitry can accommodate the specified gate charge levels for efficient operation.
Part Context
This component belongs to the Alpha & Omega Semiconductor discrete semiconductor portfolio, specifically within the IGBT transistor category. It is designed for high-voltage applications requiring robust switching capabilities. The product line emphasizes efficiency and reliability for power electronics. The specific model targets markets needing compact, high-performance switching solutions.
Replacement Considerations
Consult official Alpha & Omega Semiconductor cross-reference lists for verified substitutes. Ensure any replacement maintains the 650V voltage rating and compatible pinout configuration. Verify that alternative devices meet or exceed the original switching speed and thermal performance specifications.
