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Product Detailed Parameters
- Description：MOSFET N-CH 600V 8A TO252
- Series：aMOS5™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 2.1A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：608 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：96W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The AOD600A60 is a 600V, aMOS5 N-Channel Power Transistor in a TO-251A (IPAK) package. It features a maximum drain-source breakdown voltage of 700V and a continuous drain current of 8A. The device has a maximum on-resistance of 0.6 ohms at VGS=10V and ID=2.1A. Key dynamic parameters include a total gate charge of 11.5nC, turn-on delay time of 18ns, and body-diode reverse recovery time of 159ns. Junction temperature range is -55°C to 150°C.
Feature Summary
- Utilizes aMOS5 technology for enhanced power switching performance
- Integrated body diode with defined forward voltage and reverse recovery characteristics
- Designed for high-voltage applications with robust thermal stability
Applications
- High-voltage power switching circuits
- Motor control systems
- Industrial power supplies
Procurement Notes
Verify the specific package variant, as the datasheet covers both AOD600A60 (TO-251A) and AOI600A60 (TO-252). Confirm that the application requirements align with the 600V rating and 8A continuous current limits. Ensure proper heatsinking is considered given the thermal resistance specifications provided in the document.
Selection Notes
Select this component when a 600V N-channel MOSFET in a surface-mount IPAK package is required. Consider the 0.6 ohm RDS(ON) for conduction loss calculations. Evaluate the 11.5nC gate charge against driver capabilities. Compare thermal impedance data if operating in high-duty cycle environments.
Part Context
This part belongs to Alpha & Omega Semiconductor's aMOS5 family of N-Channel Power Transistors. It is functionally similar to the AOI600A60 but differs in physical packaging, utilizing the TO-251A form factor instead of the TO-252 used by the AOI variant.
Replacement Considerations
The AOI600A60 is a pin-compatible alternative within the same series, differing only in package type (TO-252 vs TO-251A). Verify mechanical fit before substitution.
