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Product Detailed Parameters
- Description：MOSFET N-CH 700V 8.5A TO252
- Series：aMOS5™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：700 V
- Current - Continuous Drain (Id) @ 25°C：8.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：950 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：104W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The AOD600A70R is a 700V N-Channel Power Transistor utilizing proprietary aMOS5 technology. It features a maximum drain-source breakdown voltage of 800V and a continuous drain current of 4A at 25°C case temperature. The device exhibits a typical on-resistance of 0.53Ω at VGS=10V and VDS=480V. Key switching parameters include a total gate charge of 15.5nC, turn-on delay time of 20ns, and body diode reverse recovery time of 260ns. Packaged in TO-252 (DPAK), it supports junction temperatures up to 150°C.
Feature Summary
- Proprietary aMOS5 technology for low on-resistance
- Optimized switching parameters for improved EMI performance
- Enhanced body diode characteristics for robustness and fast reverse recovery
Applications
- Flyback converters for Switch Mode Power Supplies (SMPS)
- Charger and PD Adapter designs
- Television power circuits
- Lighting applications
Procurement Notes
Verify the specific package variant required, as the datasheet indicates an AOI600A70R version available in TO-251A tubes. Confirm that the TO-252 DPAK configuration matches the target PCB footprint. Ensure compliance with export control regulations and verify suitability for intended operating conditions before finalizing procurement.
Selection Notes
Select this component for high-voltage flyback applications requiring optimized EMI performance. The enhanced body diode makes it suitable for hard-switching topologies where reverse recovery losses are critical. Evaluate thermal management requirements based on the 0.53Ω on-resistance and 150°C maximum junction temperature limits.
Part Context
This part belongs to Alpha & Omega Semiconductor's aMOS5 family of N-Channel Power Transistors. The series focuses on combining low conduction losses with optimized dynamic characteristics. The AOD600A70R specifically targets surface-mount implementations in compact power supply designs.
Replacement Considerations
The AOI600A70R is a pin-compatible alternative packaged in TO-251A tubes instead of TO-252 reels. Verify mechanical fit and mounting style compatibility when substituting between these two package types.
