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Product Detailed Parameters
- Description：MOSFET N/P-CH 40V 12A TO252-4L
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel, Common Drain
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：12A
- Rds On (Max) @ Id, Vgs：30mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：650pF @ 20V
- Power - Max：2W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-5, DPAK (4 Leads + Tab), TO-252AD
- Supplier Device Package：TO-252-4L
- Grade：-
- Qualification：-
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Overview
The AOD609 is a complementary enhancement mode field effect transistor array utilizing advanced trench technology, housed in a TO-252-4L (DPAK) surface-mount package. The n-channel device features a drain-source voltage of 40V and a continuous drain current of 12A at 25°C, with an on-resistance below 30mΩ at VGS=10V. The p-channel counterpart offers a -40V breakdown and -12A current rating, maintaining an on-resistance under 45mΩ at VGS=-10V. Both channels are rated for a maximum junction temperature of 175°C and have been subjected to 100% UIS and Rg testing.
Feature Summary
- Complementary N-Channel and P-Channel Enhancement Mode MOSFETs
- Advanced Trench Technology for Low On-Resistance and Gate Charge
- Drain Connected to Tab for Thermal Management
- 100% Unclamped Inductive Switching (UIS) Tested
Applications
- H-Bridge Circuits
- Inverters
- Power Management Systems
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging configuration. Confirm RoHS compliance status and lead times directly with Alpha & Omega Semiconductor or authorized distributors prior to purchase. Ensure the component meets all environmental and export control regulations applicable to your region.
Selection Notes
Select this component for applications requiring low-side and high-side switching within a single package footprint. Consider the thermal resistance values when designing heatsinking solutions. Verify that the gate drive voltage levels align with the specified thresholds for optimal on-resistance performance. Evaluate the package constraints against the PCB layout requirements.
Part Context
The AOD609 belongs to the AOD60 series of complementary MOSFET arrays from Alpha & Omega Semiconductor. This series focuses on providing integrated solutions for power conversion stages where space efficiency and thermal performance are critical. It serves as a direct replacement for discrete N and P-channel pairs in compact designs.
Replacement Considerations
Check pinout compatibility and thermal characteristics when substituting with other complementary MOSFET arrays. Verify that alternative parts meet the 40V voltage rating and 12A current requirements. Ensure the replacement package matches the TO-252-4L form factor for proper mounting.
