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The AOD66616 is a 60V N-Channel AlphaSGT™ Trench Power MOSFET in a TO-252 package. It features a maximum drain-source voltage (BVDSS) of 60V and continuous drain current (ID) of 70A at TC=25°C. The on-resistance (RDS(ON)) is less than 3.7mΩ at VGS=10V and 20A, and less than 5.4mΩ at VGS=6V and 20A. Gate threshold voltage (VGS(th)) ranges from 2.4V to 3.4V at TJ=25°C. Total gate charge (Qg) is 60nC max at VGS=10V. Thermal resistance junction-to-case (RθJC) is 1.1°C/W, with a maximum junction temperature of 150°C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape/reel specifications. Confirm RoHS compliance status directly with the supplier or datasheet revision notes prior to procurement. Ensure the component matches the required TO-252 form factor and thermal characteristics for the intended circuit design.
Select this component for designs requiring high current handling up to 70A with low conduction losses. The low gate charge supports efficient switching in high-frequency applications. Verify that the operating junction temperature remains within the -55°C to 150°C range and that the PCB layout accommodates the TO-252 package dimensions and thermal requirements.
This part belongs to the AlphaSGT™ series from Alpha & Omega Semiconductor Inc., utilizing advanced trench MOSFET technology. The series targets high-efficiency power management solutions for consumer, industrial, and automotive electronics. The TO-252 package provides a balance between power density and thermal dissipation capabilities suitable for surface-mount assembly.
No public substitute part numbers are documented in the provided source material.