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The AOD66620 is a 60V N-Channel Power MOSFET utilizing AlphaSGT™ technology. It features a maximum drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 58A at VGS=10V. The device exhibits low on-resistance, with RDS(ON) less than 8.5mΩ at VGS=10V and less than 11mΩ at VGS=8V. Key dynamic parameters include a total gate charge (Qg) of 25nC and a reverse recovery time (trr) of 18ns. It is housed in a TO-252 package.
Verify the specific orderable part number against the datasheet to ensure correct packaging. The standard form is Tape & Reel with a minimum order quantity of 2500 units. Confirm that the component meets RoHS and Halogen-Free compliance requirements for your manufacturing process. Ensure the TO-252 package type matches your PCB footprint design.
Select this component for applications requiring a 60V rating with high current handling up to 58A. The low RDS(ON) makes it suitable for synchronous rectification where efficiency is critical. Consider the thermal resistance values when designing heatsinking or PCB copper areas to manage power dissipation effectively within the -55°C to 150°C junction temperature range.
This part belongs to the AlphaSGT™ series from Alpha & Omega Semiconductor Inc., designed for high-performance power switching. It integrates trench technology to minimize on-resistance while maintaining excellent gate charge characteristics. The TO-252 package provides a balance between power density and thermal performance for surface-mount applications.
No public confirmed substitute part numbers are available in the provided documentation.
The maximum drain-source voltage (BVDSS) is 60V.
Yes, the datasheet confirms 100% UIS testing.