AOD66920

$1.61

Description：MOSFET N-CH 100V 19.5A/70A TO252
Series：AlphaSGT™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:19d78704a399 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 19.5A/70A TO252
Series：AlphaSGT™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：19.5A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2500 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：6.2W (Ta), 89W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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AOD66920

Overview

The AOD66920 is a 100V N-Channel Power MOSFET utilizing AlphaSGT™ trench technology in a TO-252 (DPAK) package. It features a maximum drain-source voltage of 100V and a continuous drain current of 70A at VGS=10V. The device exhibits a low on-resistance of less than 8.2mΩ at VGS=10V and less than 10.7mΩ at VGS=4.5V, supporting logic-level driving. Key electrical parameters include a gate threshold voltage of 1.5V to 2.5V, a total gate charge of 35nC to 50nC at VGS=10V, and an input capacitance of 2500pF. Thermal characteristics specify a junction-to-case resistance of 1.4°C/W and a junction-to-ambient resistance of 50°C/W.

Feature Summary

Employs AlphaSGT™ trench technology for optimized performance
Features low RDS(ON) with excellent QG x RDS(ON) figure of merit
Supports logic level driving capabilities
Subjected to 100% Unclamped Inductive Switching (UIS) testing

Applications

High frequency switching circuits
Synchronous rectification applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packaging format, such as tape and reel quantities or cut tape options. Confirm compliance status regarding RoHS and halogen-free requirements directly from the latest datasheet revision. Ensure that thermal management designs account for the specified junction-to-ambient and junction-to-case resistances under actual operating conditions.

Selection Notes

Select this component for applications requiring high efficiency in synchronous rectification due to its low on-resistance and fast switching characteristics. Consider the logic-level gate drive capability when designing control circuits that operate at lower voltages. Evaluate the thermal performance based on the specific PCB copper area and airflow conditions, as the junction-to-ambient resistance is highly dependent on board layout.

Part Context

This part belongs to the AlphaSGT™ series of power MOSFETs manufactured by Alpha & Omega Semiconductor Inc. The series is characterized by advanced trench technology designed to minimize conduction losses while maintaining robust switching performance. The TO-252 package provides a balance between power handling capability and surface-mount convenience for various industrial and consumer electronics applications.

Replacement Considerations

Cross-reference with other 100V N-Channel MOSFETs in the TO-252 package that offer comparable RDS(ON) and gate charge specifications. Verify pinout compatibility and ensure that the replacement device meets or exceeds the required avalanche energy ratings and thermal resistance values for the intended application.