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The AOGF60B65H2AL is a 650V AlphaIGBT with an integrated soft and fast recovery anti-parallel diode, housed in a TO3PF package. It features a collector-emitter saturation voltage of 1.95V at 25°C and 60A. The device supports a continuous collector current of 60A at 100°C case temperature and a pulsed collector current of 180A. Total gate charge is 84nC, with turn-on and turn-off energies of 2.36mJ and 1.17mJ respectively at 150°C. The maximum junction-to-case thermal resistance is 1.7°C/W for the IGBT and 2.5°C/W for the diode.
Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and handling specifications. Confirm that the component meets all applicable export control regulations and legal requirements before procurement. Evaluate product suitability for intended applications as liability for life support systems is not assumed by the manufacturer.
Select this component based on its 650V breakdown voltage and 60A continuous current rating at elevated temperatures. Consider the low saturation voltage and fast switching characteristics for high-frequency designs. Ensure adequate thermal management given the specified junction-to-case thermal resistances. Verify compatibility with standard gate drive voltages and required switching energy limits.
This part belongs to the AlphaIGBT family from Alpha & Omega Semiconductor Inc., designed for high-performance power switching. It integrates an IGBT switch with a complementary anti-parallel diode in a single TO3PF package. The series emphasizes low switching losses and improved electromagnetic interference performance compared to standard IGBTs.
No public confirmed substitute part numbers are available in the provided source material.