Single FETs, MOSFETs AOH3106 product image

AOH3106

$0.14
  • Description:MOSFET N-CH 100V 2A SOT223
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:e182120b33c9 Category: Brand:

  
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AOH3106 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 100V 2A SOT223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOH3106

  • Description:MOSFET N-CH 100V 2A SOT223
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:360mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:185 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):3.1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-223-4
  • Package / Case:TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for AOH3106

AOH3106

Single FETs, MOSFETs Overview

The AOH3106 is a 100V N-Channel MOSFET utilizing advanced trench technology. It features a drain-source breakdown voltage of 100V and a continuous drain current of 2A at VGS=10V. The on-state resistance is less than 360mW at VGS=10V and less than 385mW at VGS=4.5V. The device operates within a junction temperature range of -55°C to 150°C and is housed in a SOT223 package.

Single FETs, MOSFETs Feature Summary

  • Advanced trench MOSFET technology combined with low resistance packaging for extremely low RDS(ON).
  • Capable of operation in boost converters and synchronous rectifier applications.
  • Suitable for consumer, telecom, industrial power supplies, and LED backlighting.

Single FETs, MOSFETs Applications

  • Boost converters
  • Synchronous rectifiers
  • Consumer power supplies
  • Telecom power supplies
  • Industrial power supplies
  • LED backlighting

Single FETs, MOSFETs Procurement Notes

Verify the specific revision status and datasheet version before procurement, as specifications may be subject to change without notice. Confirm thermal performance requirements against the provided junction-to-ambient resistance values measured under standard FR-4 board conditions. Ensure compatibility with intended gate drive voltages given the specified RDS(ON) thresholds.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 100V rating with a 2A continuous current capacity in a compact SOT223 footprint. Consider the lower RDS(ON) value when operating with a 10V gate drive compared to 4.5V. Evaluate thermal management needs based on the 75°C/W junction-to-ambient resistance in still air environments.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's lineup of N-Channel MOSFETs designed for general-purpose switching applications. The AOH3106 specifically targets efficiency improvements in power conversion circuits through its low on-resistance characteristics derived from trench technology.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the source material.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current (IDM) is 7A.

What is the avalanche energy rating?

The avalanche energy (EAS) is 1.3 mJ when tested with an inductance of 100uH.

What is the body diode reverse recovery time?

The body diode reverse recovery time (trr) is 17 ns.

AOH3106AOH3106
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