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AOH3106 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 100V 2A SOT223. Review the specifications below when checking this part for your BOM.
The AOH3106 is a 100V N-Channel MOSFET utilizing advanced trench technology. It features a drain-source breakdown voltage of 100V and a continuous drain current of 2A at VGS=10V. The on-state resistance is less than 360mW at VGS=10V and less than 385mW at VGS=4.5V. The device operates within a junction temperature range of -55°C to 150°C and is housed in a SOT223 package.
Verify the specific revision status and datasheet version before procurement, as specifications may be subject to change without notice. Confirm thermal performance requirements against the provided junction-to-ambient resistance values measured under standard FR-4 board conditions. Ensure compatibility with intended gate drive voltages given the specified RDS(ON) thresholds.
Select this component for designs requiring a 100V rating with a 2A continuous current capacity in a compact SOT223 footprint. Consider the lower RDS(ON) value when operating with a 10V gate drive compared to 4.5V. Evaluate thermal management needs based on the 75°C/W junction-to-ambient resistance in still air environments.
This part belongs to Alpha & Omega Semiconductor's lineup of N-Channel MOSFETs designed for general-purpose switching applications. The AOH3106 specifically targets efficiency improvements in power conversion circuits through its low on-resistance characteristics derived from trench technology.
No public confirmed substitute part numbers are available in the source material.
The maximum pulsed drain current (IDM) is 7A.
The avalanche energy (EAS) is 1.3 mJ when tested with an inductance of 100uH.
The body diode reverse recovery time (trr) is 17 ns.
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