AOI1N60L

Description：MOSFET N-CH 600V 1.3A TO251A
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:958d693334c6 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 1.3A TO251A
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：1.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：9Ohm @ 650mA, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：160 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：45W (Tc)
Operating Temperature：-50°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-251A
Package / Case：TO-251-3 Stub Leads, IPAK

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AOI1N60L

Overview

The AOI1N60 is a 600V N-Channel MOSFET from Alpha & Omega Semiconductor, part of the AOD1N60/AOU1N60/AOI1N60 family. It features a maximum drain current (ID) of 1.3A at TC=25°C and a typical on-resistance (RDS(on)) of less than 9Ω at VGS=10V. The device operates within a junction temperature range of -55°C to 150°C and includes guaranteed avalanche capability with repetitive energy ratings up to 15mJ.

Feature Summary

Advanced high-voltage MOSFET process designed for robust performance in AC/DC applications
Guaranteed avalanche capability supporting unclamped inductive switching scenarios
Low input capacitance and gate charge facilitating rapid adoption in offline power supply designs

Applications

Offline power supply designs
AC/DC converter circuits
General purpose switching applications

Procurement Notes

Verify the specific package variant required, as the datasheet covers TO251, TO252, and TO251A configurations. Confirm that the component meets consumer market qualification standards, as critical life support applications are explicitly excluded from authorization by the manufacturer.

Selection Notes

Select this component for low-current 600V switching tasks requiring ruggedness. The high RDS(on) compared to modern superjunction devices limits efficiency in high-current paths. Ensure thermal management accounts for the specified junction-to-ambient resistance values under still air conditions.

Part Context

This part belongs to a series including AOD1N60 and AOU1N60, sharing identical electrical specifications but differing in physical packaging. The AOI1N60 designation specifically identifies one of the surface-mount or through-hole variants within this 600V, 1.3A portfolio designed for general-purpose power management.

Replacement Considerations

Direct functional equivalents include the AOD1N60 and AOU1N60, which share the same electrical parameters. Verify pinout compatibility and thermal pad requirements when substituting between the different package types listed in the datasheet.