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Product Detailed Parameters
- Description：MOSFET N-CH 700V 3.8A TO251A
- Series：aMOS™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：700 V
- Current - Continuous Drain (Id) @ 25°C：3.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.4Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：4.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：354 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：48W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-251A
- Package / Case：TO-251-3 Stub Leads, IPAK
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Overview
The AOI1R4A70 is a 700V N-Channel Power MOSFET from Alpha & Omega Semiconductor, packaged in TO-252 (DPAK). It features a maximum drain-source voltage of 800V and a continuous drain current of 1.9A at 25°C case temperature. The device has a maximum on-resistance of 1.4Ω at VGS=10V. Key dynamic parameters include a total gate charge of 7.4nC and a body diode reverse recovery time of 176ns. The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- High-voltage capability with an 800V breakdown rating for robust operation in high-stress environments.
- Integrated body diode with defined forward voltage and reverse recovery characteristics suitable for synchronous rectification.
- Low gate charge design facilitating efficient switching performance and reduced driver power requirements.
Applications
- DC-DC converter circuits
- Power supply unit output stages
- Motor control applications
Procurement Notes
Verify the specific suffix 'I' against official Alpha & Omega Semiconductor documentation to confirm package type and pinout compatibility. Ensure that the procurement channel provides valid traceability data. Confirm RoHS compliance status through the manufacturer's latest environmental declarations before finalizing orders.
Selection Notes
Select this component when a compact DPAK package is required for moderate current handling up to 1.9A. Evaluate thermal resistance constraints carefully due to the relatively high on-resistance compared to lower voltage devices. Consider the 800V rating for systems requiring margin above standard 700V ratings.
Part Context
This part belongs to the AOD/AOI series of N-Channel Power Transistors manufactured by Alpha & Omega Semiconductor. The series utilizes advanced planar trench technology to achieve high reliability and consistent performance across various power management applications.
Replacement Considerations
Check official substitution lists for equivalent parts with matching voltage and current ratings. Verify pin-to-pin compatibility if replacing in existing layouts. Ensure thermal and electrical specifications meet or exceed original design requirements.
FAQ
What is the maximum drain-source voltage rating?
The maximum drain-source voltage (BVDSS) is rated at 800V.
What is the typical gate charge value?
The total gate charge (Qg) is typically 7.4 nC.
